Surface morphologies for Br-etched Si(100)-2×1: Kinetics of pit growth and step retreat

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2519-2523

  Williams, F J ^a  

^a UNIVERSIDAD NACIONAL DE MAR DEL PLATA   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000713976     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588762     Document Type: Article

References (13)

1. R. J. Schutz, in VLSI Technology, edited by S. M. Sze (McGraw-Hill, New York, 1988), p. 184.
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5. Polymer Synthesis, edited by P. Rempp and E. W. Merrill (Hüthig and Wepf, New York, 1986), Chaps. 2 and 3;
6. P. J. Flory, Chem. Rev. 39, 137 (1946).
7. A general process can involve many subprocesses, each having a different time constant. Those that have reached their final state values are said to be in quasi-steady state since others may not have. Here, quasi-steady state implies that pits of length less than about 10 units have reached their final values; those that are extremely long, say 30 units, have not. As a step retreats across a terrace, it erases terrace pits. Hence, steps of long length never have sufficient time to reach final values. Processes that describe step retreat and pit growth are thermally activated with different energies so that the ratio in their rates will be dependent on temperature. The effect of pit erasure is then dependent on temperature and step width.
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13. Y. Gong, D. W. Owens, and J. H. Weaver, Phys. Rev. B (to be published).