Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals

Applied Physics A: Materials Science and Processing

Volumn 91, Issue 1, 2008, Pages 23-28

  Traversa, M ^a,c   Tapfer, L ^b   Paiano, P ^a   Prete, P ^c   Marzo, F ^a   Lovergine, N ^a   Mancini, A M ^a  

^a UNIVERSITY OF SALENTO   (Italy)

^b Centro Ricerche Brindisi   (Italy)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CADMIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; METHANOL; RADIATION DETECTORS; STOICHIOMETRY;

HEAT CLEANING; NUCLEAR RADIATION DETECTORS; PRECURSOR STOICHIOMETRY;

CRYSTALS;

EID: 39149136489     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-007-4382-1     Document Type: Article

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