MOVPE growth optimisation of CdTe epitaxial layers for p-i-n diode X-ray detector fabrication

Physica Status Solidi C: Conferences

Volumn 3, Issue 4, 2006, Pages 754-757

  Traversa, M ^a   Marzo, F ^a   Prete, P ^b   Tapfer, L ^c   Cappello, A ^c   Lovergine, N ^a   Mancini, A M ^a  

^a UNIVERSITY OF SALENTO   (Italy)

^b CNR   (Italy)

^c ENEA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT; IODINE; MASS SPECTROMETRY; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DIODES; X RAYS; ATMOSPHERIC PRESSURE; DOPING (ADDITIVES); EPILAYERS; EPITAXIAL GROWTH; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; SURFACE ROUGHNESS; VAPORS; X RAY APPARATUS;

DOPANT; HOMOEPITAXY; X-RAY DETECTORS;

PHOTODETECTORS; CADMIUM TELLURIDE;

07.85.NC; 61.10.NZ; 68.55.JK; 68.55.LN; 73.61.GA; 81.15.KK;

EID: 33646174451     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564667     Document Type: Conference Paper

References (4)

1. P. Sellin, Nucl. Instrum Methods A 458, 288 (2003).
2. A. V. Rybka, S. A. Leonov et al., Nucl. Instr. Meth. Phys. Res. A 458, 249 (2001), and references therein.
3. M. Niraula, D. Mochizuki, T. Aoki, Y. Tomita, T. Nihashi, and Y. Hatanaka, IEEE Trans. Nucl. Sci. 46, 1237 (1999).
4. N. Lovergine, M. Longo, P. Prete, D. Gerardi, L. Calcagnile, R. Cingolani, and A. M. Mancini, J. Appl. Phys. 81, 685 (1997).