High-resolution Schottky CdTe diode detector

IEEE Transactions on Nuclear Science

Volumn 49 II, Issue 3, 2002, Pages 1297-1303

  Takahashi, Tadayuki ^a,b   Mitani, Takefumi ^a,b   Kobayashi, Yoshihito ^a,b   Kouda, Manabu ^a,b   Sato, Goro ^a,b   Watanabe, Shin ^a,b   Nakazawa, Kazuhiro ^a   Okada, Yuu ^b   Funaki, Minoru ^c   Ohno, Ryoichi ^c   Mori, Kunishiro ^d  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c Acrorad Co Ltd   (Japan)

^d Clear Pulse Ltd   (Japan)

Author keywords

CdTe; CdZnTe; Gamma ray; Pixel detector; X ray

Indexed keywords

CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; GAMMA RAYS; GRAIN BOUNDARIES; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING CADMIUM TELLURIDE; SINGLE CRYSTALS; SPECTROMETRY;

CADMIUM ZINC TELLURIDE; CHARGE COLLECTION EFFICIENCY; ENERGY RESOLUTION; PIXEL DETECTOR; TRAVELING HEATER METHOD;

RADIATION DETECTORS;

EID: 0036624656     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.1039655     Document Type: Article

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