Microstructure and dielectric properties of BaZr x Ti 1-xO 3 ceramics

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 4, 2008, Pages 379-382

  Chen, Hongwei ^a   Yang, Chuanren ^a   Fu, Chunlin ^b   Shi, Jun ^a   Zhang, Jihua ^a   Leng, Wenjian ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b CHONGQING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

TETRAGONAL STRUCTURE;

BARIUM COMPOUNDS; COERCIVE FORCE; CRYSTAL STRUCTURE; ELECTRIC FIELDS; LATTICE CONSTANTS; PERMITTIVITY; PHASE TRANSITIONS; REMANENCE;

CERAMIC MATERIALS;

EID: 39149107501     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9348-8     Document Type: Article

References (10)

1. H.V. Alexandru, C. Berbecaru, A. Ioachim, M.I. Toacsen, M.G. Banciu, L. Nedelcu, D. Ghetu, Mater. Sci. Eng. B 109(1-3), 152 (2004)
2. B. Chen, H. Yang, J. Miao, L. Zhao, L.X. Cao, B. Xu, X.G. Qiu, B.R. Zhao, J. Appl. Phys. 97(2), 024106 (2005)
3. J.D. Baniecki, T. Shioga, K. Kurihara, N. Kamehara, J. Appl. Phys. 97(11), 114101 (2005)
4. W.S. Choi, B.S. Jang, D.G. Lim, J. Yi, B. Hong, J. Cryst. Growth 237-239(1), 438 (2002)
5. X.G. Tang, K.H. Chen, H.L.W. Chan, Acta Mater. 52(17), 5177 (2004)
6. X.G. Tang, J. Wang, X.X. Wang, H.L.W. Chan, Solid State Commun. 131(3-4), 163 (2004)
7. Z. Yu, C. Ang, R. Guo, A.S. Bhalla, Appl. Phys. Lett. 81(7), 1285 (2002)
8. Y. Wang, L. Li, J. Qi, Z. Gui, Ceramics Int. 28(6), 657 (2002)
9. A. Outzourhit, M.A.E.I. Raghni, M.L. Hafid, F. Bensamka, A. Outzourhit, J. Alloys Compd. 340(1-2), 214 (2002)
10. C.C. Leu, C.Y. Chen, C.H. Chien, M.N. Chang, Appl. Phys. Lett. 82(20), 3493 (2003)