Effect of oxygen deficiency on the radiation sensitivity of sol-gel Ge-doped amorphous SiO 2

European Physical Journal B

Volumn 61, Issue 1, 2008, Pages 25-31

  Agnello, S ^a   Alessi, A ^a   Gelardi, F M ^a   Boscaino, R ^a   Parlato, A ^a   Grandi, S ^b   Magistris, A ^b  

^a UNIVERSITY OF PALERMO   (Italy)

^b UNIVERSITY OF PAVIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GAMMA RAY IRRADIATION; OXYGEN DEFICIENCY; PARAMAGNETIC CENTERS; RADIATION SENSITIVITY;

CORRELATION METHODS; GAMMA RAYS; PARAMAGNETIC RESONANCE; RADIATION EFFECTS; SILICA; SOL-GEL PROCESS;

AMORPHOUS MATERIALS;

EID: 39049108619     PISSN: 14346028     EISSN: 14346036     Source Type: Journal    
DOI: 10.1140/epjb/e2008-00025-1     Document Type: Article

References (25)

1. 2 and related dielectrics: Science and Technology, edited by G. Pacchioni, L. Skuja, D.L. Griscom, (Kluwer Academic Publishers, Dordrecht, 2000), p. 453
2. M. Leone, S. Agnello, R. Boscaino, M. Cannas, F.M. Gelardi, in Silicon-based Materials and Devices, edited by H.S. Nalwa (Academic Press, San Diego, 2001)
3. V.B. Neustruev, J. Phys. Condens. Matter 6, 6901 (1994)
4. L. Skuja, J. Non Cryst. Sol. 149, 77 (1992)
5. T.E. Tsai, E.J. Friebele, M. Rajaram, S. Mukhapadhyay, Appl. Phys. Lett. 64, 1481 (1994)
6. V.B. Sulimov, V.O. Sokolov, E.M. Dianov, B. Poumellec, Quant. Electr. 26, 988 (1996)
7. A. Zatsepin, V.S. Kortov, H.-J. Fitting, J. Non Cryst. Sol. 351, 869 (2005)
8. F. Meinardi, A. Paleari, Phys. Rev. B 58, 3511 (1998)
9. R.F. Cuevas, E.H. Sekiya, A. Garcia-Quiroz, E.C. Da Silva, C.K. Suzuki, Mat. Sci. Eng. B 111, 135 (2004)
10. R.F. Cuevas, E.H. Sekiya, A. Garcia-Quiroz, E.C. Da Silva, C.K. Suzuki, Nucl. Instrum. Methods Phys. Res., Sect. B 247, 285 (2006)
11. Y.Watanabe, H. Kawazoe, K. Shibuya, K. Muta, Jap J. Appl. Phys. 25, 425 (1986)
12. E.V. Anoikin, A.N. Guryanov, D.D. Gusovskii, V.M. Mashinskii, S.I. Miroshnichenko, V.B. Neustruev, V.A. Tikhomirov, Y.B. Zverev, Sov. Ligtht. Comm. 1, 123 (1991)
13. E.J. Friebele, D.L. Griscom, G.H. Sigel Jr, J. Appl. Phys. 45, 3424 (1974)
14. M. Fujimaki, T. Watanabe, T. Katoh, T. Kasahara, N. Miyazaki, Y. Ohki, Phys. Rev. B 57 3920 (1998)
15. S. Agnello, R. Boscaino, M. Cannas, F.M. Gelardi, F. La Mattina, S. Grandi, A. Magistris, J. Non Cryst. Sol. 322, 134 (2003)
16. S. Agnello, R. Boscaino, M. Cannas, F.M. Gelardi, Phys. Rev. B 64, 174423 (2001)
17. S. Grandi, P. Mustarelli, S. Agnello, M. Cannas, A. Cannizzo, J. Sol-Gel Science and Tech. 26, 915 (2003)
18. H.Hosono, Y. Abe, D.L. Kinser, R.A. Weeks, K. Muta, H. Kawazoe, Phys. Rev. B 46, 11445 (1992)
19. L. SKuja, J. Non Cryst. Sol. 239, 16 (1998)
20. H. Nishikawa, in Silicon-based Materials and Devices, edited by H.S. Nalwa (Academic Press, San Diego, 2001)
21. M. Yamaguchi, K. Saito, A.J. Ikushima, Phys. Rev. B 66, 132106 (2002)
22. M. Takahashi, H. Shigemura, Y. Kawamoto, J. Nishii, T. Yoko, J. Non Cryst. Sol. 259, 149 (1999)
23. D.L. Griscom, Nucl. Instrum. Methods Phys. Res., Sect. B 1, 481 (1984)
24. G. Pacchioni, C. Mazzeo, Phys. Rev. B 62, 5452 (2000)
25. J. Du, L.R. Corrales, K. Tsemekhman, E.J. Bylaska, Nucl. Instrum. Methods Phys. Res., Sect. B 225, 188 (2007)