Photochemical reactions of Ge-related defects in 10GeO2·90SiO2 glass prepared by sol-gel process

Journal of Non-Crystalline Solids

Volumn 259, Issue 1-3, 1999, Pages 149-155

  Takahashi, Masahide ^a,b   Shigemura, Hikari ^b   Kawamoto, Yoji ^b   Nishii, Junji ^c   Yoko, Toshinobu ^a  

^a KYOTO UNIVERSITY   (Japan)

^b KOBE UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; EMISSION SPECTROSCOPY; PHOTOCHEMICAL REACTIONS; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING GLASS; SINTERING; SOL-GELS; ULTRAVIOLET RADIATION;

GERMANOSILICATE;

PHOTOSENSITIVE GLASS;

EID: 0033355847     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(99)00504-9     Document Type: Article

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