Dependence of H2/O2 ratio and GeO2 content on the enhancement of second-order non-linearity related defects in Ge-doped optical fiber preforms

Materials Science and Engineering: B

Volumn 111, Issue 2-3, 2004, Pages 135-141

  Cuevas, R F ^a   Sekiya, E H ^a   Garcia Quiroz, A ^a   Da Silva, E C ^a   Suzuki, C K ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

Point defects; Second order optical non linearity; SiO2:GeO2 glass preform; VAD

Indexed keywords

ABSORPTION SPECTROSCOPY; DEPOSITION; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRON TRAPS; FLUORESCENCE; GERMANIUM COMPOUNDS; OPTICAL SWITCHES; PARAMAGNETISM; POINT DEFECTS; SEMICONDUCTOR DOPING; SILICA; ULTRAVIOLET RADIATION; X RAYS;

ABSORPTION BANDS; SECOND-ORDER OPTICAL NON-LINEARITY; SIO2:GEO2 GLASS PREFORMS; VAD;

OPTICAL FIBERS;

EID: 3242677951     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.04.010     Document Type: Article

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