Formation and relaxation processes of photoinduced defects in a Ge-doped SiO2 glass

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 13, 2002, Pages 1321061-1321064

  Yamaguchi, M ^a   Saito, K ^a   Ikushima, A J ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; FLUORINE; GERMANIUM; GLASS; SILICON DIOXIDE;

ARTICLE; ELECTRON SPIN RESONANCE; IRRADIATION; LASER; LIGHT; TEMPERATURE;

EID: 0036813670     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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