16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating

IEEE Transactions on Microwave Theory and Techniques

Volumn 56, Issue 2, 2008, Pages 339-345

  Li, Qiang ^a,b,c   Zhang, Y P ^b   Yeo, Kiat Seng ^a,b   Lim, Wei Meng ^b  

^a IEEE

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Asymmetric drain source; CMOS integrated circuits; MOSFET switches; RF switches; Switched body floating; Transmit receive (T R) switches; Triple well

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; INSERTION LOSSES; TRANSISTORS;

ASYMMETRIC DRAIN-SOURCE; COMPRESSION POINT; MOSFET SWITCHES; RF SWITCHES; SWITCHED BODY-FLOATING TECHNIQUE;

ELECTRIC SWITCHES;

EID: 38949204549     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2007.914364     Document Type: Article

References (10)

1. F.-J. Huang and K. O., "A 0.5-μm CMOS T/R switch for 900-MHz wireless applications," IEEE J. Solid-State Circuits, vol. 36, no. 3, pp. 486-492, Mar. 2001.
2. K. Yamamoto, T. Heima, A. Furukawa, M. Ono, Y. Hashizume, H. Komurasaki, S. Maeda, H. Sato, and N. Kato, "A 2.4-GHz-band 1.8-V operation single-chip Si-CMOS T/R-MMIC front-end with, a low insertion loss switch," IEEE J. Solid-State Circuits, vol. 36, no. 8, pp. 1186-1197, Aug. 2001.
3. Z. Li, H. Yoon, F.-J. Huang, and K. K. O, "5.8-GHz CMOS T/R switches with high and low substrate resistance in a 0.18-μm CMOS process," IEEE Microw. Wireless Compon. Lett., vol. 13, no. 1, pp. 1-3, Jan. 2003.
4. C. Tinella, J. M. Fournier, D. Belot, and V. Knopik, "A high-performance CMOS-SOI antenna switch for the 2.5-5-GHz band," IEEE J. Solid-State Circuits, vol. 38, no. 7, pp. 1279-1283, Jul. 2003.
5. N. A. Talwalkar, C. P. Yue, H. Gan, and S. S. Wong, "Integrated CMOS transmit-receive switch using LC-tuned substrate bias for 2.4-GHz and 5.2-GHz applications," IEEE J. Solid-State Circuits, vol. 39, no. 6, pp. 863-870, Jun. 2004.
6. T. Ohnakado, S. Yamakawa, T. Murakami, A. Furukawa, E. Taniguchi, H. Ueda, N. Suematsu, and T. Oomori, "21.5-dBm. power-handling 5-GHz transmit/receive CMOS switch realized by voltage division effect of stacked transistor configuration with depletion-layer-extended transistors DETs," IEEE J. Solid-State Circuits, vol. 39, no. 4, pp. 577-584, Apr. 2004.
7. M.-C. Yeh, Z.-M. Tsai, R.-C. Liu, K.-Y. Lin, Y.-T. Chang, and H. Wang, "Design and analysis for a miniature CMOS SPDT switch using body-floating technique to improve power performance," IEEE Trans. Micmw. Theory Tech., vol. 54, no. 1, pp. 31-39, Jan. 2006.
8. Z. Li and K. O., "15-GHz fully integrated nMOS switches in a 0.13-μm CMOS process," IEEE J. Solid-State Circuits, vol. 40, no. 11, pp. 2323-2328, Nov. 2005.
9. Y. Jin and C. Nguyen, "Ultra-compact high-linearity high-power fully integrated DC-20-GHz 0.18-μm CMOS T/R switch," IEEE Trans. Microw. Theory Tech., vol. 55, no. 1, pp. 30-36, Jan. 2007.
10. L. Qiang and Y. P. Zhang, "CMOS T/R switch design: Towards ultrawideband and higher frequency," IEEE J. Solid-State Circuits, vol. 42, no. 3, pp. 563-570, Mar. 2007.