21.5-dBm Power-Handling 5-GHz Transmit/Receive CMOS Switch Realized by Voltage Division Effect of Stacked Transistor Configuration With Depletion-Layer-Extended Transistors (DETs)

IEEE Journal of Solid-State Circuits

Volumn 39, Issue 4, 2004, Pages 577-584

  Ohnakado, Takahiro ^a   Yamakawa, Satoshi ^a   Murakami, Takaaki ^a   Furukawa, Akihiko ^a   Taniguchi, Eiji ^a   Ueda, Hiro Omi ^a   Suematsu, Noriharu ^a   Oomori, Tatsuo ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

CMOS integrated circuits; Microwave circuits; Microwave devices; MOSFETS; Switches

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRIC SWITCHES; INSERTION LOSSES; MICROWAVE CIRCUITS; MICROWAVE DEVICES; MOSFET DEVICES; TRANSCEIVERS; WAVEFORM ANALYSIS;

DEPLETION-LAYER-EXTENDED TRANSISTORS (DET); SOURCE/DRAIN JUNCTIONS;

CMOS INTEGRATED CIRCUITS;

EID: 1942501100     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.825231     Document Type: Article

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