3V low noise amplifier implemented using a 0.8μm CMOS process with three metal layers for 900MHz operation

Electronics Letters

Volumn 32, Issue 13, 1996, Pages 1191-1193

  Ho, Y C ^a   Biyani, M ^a   Colvin, J ^a   Smithhisler, C ^a   OK , ^a  

^a University of Florida   (United States)

Author keywords

Amplifiers; CMOS integrated circuits

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITORS; CASCADE CONNECTIONS; ELECTRIC INDUCTORS; SPURIOUS SIGNAL NOISE;

INTEGRATED INDUCTORS; LOW NOISE AMPLIFIER; MATCHING NETWORKS; POWER GAIN;

CMOS INTEGRATED CIRCUITS;

EID: 0030173054     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960821     Document Type: Article

References (3)

1. CHANO, J.Y.C., ABIDI, A.A., and GAITAN, M.: 'Large suspended inductors on silicon and their use in a 2μm CMOS RF amplifier', IEEE Electron Device Lett., 1993, 14, (5), pp. 246-248
2. KARANICOLAS, A.N.: 'A 2.7V 900MHz CMOS LNA and mixer'. ISSCC Digest of Technical Papers, San Francisco, CA, February 1996, pp. 50-51
3. GREENHOUSE, H.M.: 'Design of planar rectangular microelectric inductors', IEEE Trans. Parts, Hybrids, Packaging, 1974, PHP-10, pp. 101-109