Properties of CrSi2 nanocrystallites grown in a silicon matrix

Journal of Physics Condensed Matter

Volumn 19, Issue 50, 2007, Pages

  Galkin, N G ^a   Dozsa L ^b   Turchin, T V ^a   Goroshko, D L ^a   Pecz B ^b   Toth L ^b   Dobos, L ^b   Khanh, N Q ^b   Cherednichenko, A I ^c  

^a INSTITUTE OF AUTOMATION AND CONTROL PROCESSES   (Russian Federation)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c INSTITUTE OF CHEMISTRY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM COMPOUNDS; EPITAXIAL GROWTH; OPTICAL PROPERTIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

OPTICAL REFLECTANCE SPECTROSCOPY (ORS); REACTIVE DEPOSITION EPITAXY; SILICON MATRIX;

NANOCRYSTALLITES;

EID: 38849176251     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/50/506204     Document Type: Article

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