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Volumn 259, Issue 1-2, 2003, Pages 40-46

Studies on single- and multi-layer InAsN quantum dots grown by solid-source molecular beam epitaxy

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA SOURCES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0141964086     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01580-X     Document Type: Article
Times cited : (7)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.