Electron injection from GaN to SiC and fabrication of GaN/SiC heterojunction bipolar transistors

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1545-1548

  Suda, Jun ^a,b   Nakano, Yuki ^a   Shimada, Syouta ^a   Amari, Kouichi ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

BJT; EL; Emitter efficiency; GaN; HBT; Injection; MBE

Indexed keywords

ELECTROLUMINESCENCE; ELECTRON INJECTION; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; SILICON CARBIDE;

CURRENT GAIN; EMITTER EFFICIENCY; HETEROJUNCTION DIODES;

GALLIUM NITRIDE;

EID: 37849027536     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1545     Document Type: Conference Paper

References (5)

1. J. Pankove, S.-S. Chang, H. C. Lee, R. Molnar, T. D. Moustakas and B. Van Zeghbroeck: Proc. IEDM, San Francisco, U.S.A (1994), p. 389
2. B. Van Zeghbroeck, S.-S. Chang, R.L. Waters, J. Torvik and J. Pankove: Solid-State Electron. Vol. 44 (2000), p. 256
3. Y. Nakano, J. Suda and T. Kimoto: physica status solidi (c) Vol. 2 (2005), p. 2208
4. N. Onojima, J. Suda and H. Matsunami: Jpn. J. Appl. Phys. Vol. 42 (2003), p. L445
5. J. Suda, Y. Nakano and T. Kimoto: MRS Proc. Vol. 831 (2005), E8.34