Characterization of 4H-SiC MOSFET interface trap charge density using a first principles coulomb scattering mobility model and device simulation

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2005, Issue , 2005, Pages 95-98

  Potbhare, Siddharth ^a   Pennington, Gary ^a   Goldsman, Neil ^a   McGarrity, James M ^a   Lelis, Aivars ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

4H SiC MOSFETs; Coulomb scattering mobility model; Interface traps

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC CONDUCTANCE; NUMERICAL ANALYSIS; SILICON CARBIDE;

COULOMB SCATTERING; INTERFACE TRAPS; MOBILE CARRIERS; MOBILITY MODELS;

MOSFET DEVICES;

EID: 33845875688     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/sispad.2005.201481     Document Type: Conference Paper

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