Initial assessment of the lithographic impact of the use of a hard pellicle on wafer distortion

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5377, Issue PART 3, 2004, Pages 1679-1688

  Kocsis, Michael ^b,e   De Bisschop, Peter ^a   Bruls, Richard ^c   Grenville, Andrew ^d,e   Van Peski, Chris ^d  

^a IMEC   (Belgium)

^b ISMT   (Belgium)

^c ASML   (Netherlands)

^d Imec   (United States)

^e INTEL CORPORATION   (United States)

Author keywords

157 nm lithography; Distortion; Hard pellicle; Overlay

Indexed keywords

ABERRATIONS; FUSED SILICA; IMAGE ANALYSIS; INTERFEROMETRY; LIGHT REFRACTION; PHASE SHIFT;

157 NM LITHOGRAPHY; DISTORTION; HARD PELLICLE; OVERLAY;

LITHOGRAPHY;

EID: 3843148202     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.537521     Document Type: Conference Paper

References (6)

1. P. De Bisschop, M. Kocsis, R. Bruls, C. Van Peski, A. Grenville, 'Initial assessment of the impact of a hard pellicle on imaging using a 193 nm step-and-scan system', JM3 Vol 3 (2004) Number 2, April 2004.
2. P. De Bisschop, M. Kocsis, R. Bruls, C. Van Peski, A. Grenville, 'Initial assessment of the lithographic impact of the use of hard pellicles: an Overview', Proc SPIE 5377 (2004)
3. SEMI Standard Document "Standard for Fused-Silica Pellicle/Reticle Systems for use in 157nm Exposure Systems", Rev. 0_C of August 21, 2003
4. L.L. Deck, C. Van Peski, R. Eandi, "Measurements of hard pellicles for 157 nm lithography using Fourier transform phase-shifting interferometry", in 'Photomask Japan 2003', Proc SPIE 5130 (2003)
5. th European Mask Conference EMC', January 2004.
6. th International Symposium on 157 nm lithography', Yokohama, Japan, August 25-28, 2003