Optimization of organic bottom antireflective coatings& compatibility with ArF resists

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4690 II, Issue , 2002, Pages 1102-1111

  Xiang, Zhong ^a   Shan, Jianhui ^a   Gonzalez, Eleazar ^a   Wu, Hengpeng ^a   Ding, Shuji ^a   Neisser, Mark ^a   Ho, Bang Chein ^b   Chen, Harrison ^b  

^a CLARIANT CORPORATION   (United States)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

193 nm; ArF; Bottom antireflective coating; Lithography; Photoresist

Indexed keywords

ANTIREFLECTION COATINGS; DEFECTS; ETCHING; OPTICAL PROPERTIES; OPTIMIZATION;

FILM STACKS;

PHOTORESISTS;

EID: 0036029881     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474186     Document Type: Article

References (5)

1. J. Finder, et al., "Can DUV Lithography Take US Below 100 nm?" SPIE, publication pending, 2001.
2. J. Beach, et al., "Fine tuning the process: The status of 193 nm technology" Solid State Technology, Nov. 2001, p54.
3. J. Beach, et al., "Current Performance of 193 nm Resists: Are They Ready for Production?" Proc. Interface 2001.
4. M. Padmanaban, et al., "Bottom Anti-Reflective Coating for ArF, KrF and I-line Applications: A Comparison of Theory, Design, and Lithographic Aspects" SPIE Vol. 3678, March 1999, p550.
5. P. Trefonas, et al., "Organic Antireflective Coatings for 193 nm Lithography" SPIE Vol. 3678, March 1999, p702.