Development of 193 nm b.a.r.c.s for dual damascene applications

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4690 II, Issue , 2002, Pages 1112-1118

  Wu, Hengpeng ^a   Xiang, Zhong ^a   Gonzalez, Eleazer ^a   Shan, Jianhui ^a   Ding, Shuji ^a   Kang, Wenbing ^b   Hishida, Aritaka ^b  

^a CLARIANT CORPORATION   (United States)

^b SÜD CHEMIE AG   (Germany)

Author keywords

193 nm; B.a.r.c; Bottom anti reflective coating; Dual damascene; Via filling

Indexed keywords

ANTIREFLECTION COATINGS; GLASS TRANSITION; MOLECULAR WEIGHT; OPTIMIZATION; RELIABILITY;

DUAL DAMASCENE;

PHOTOLITHOGRAPHY;

EID: 0036029498     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474188     Document Type: Article

References (4)

1. P.K.K. Ho, M. Zhou, S. Gupta, R. Chockalingam, J. Li, M. Fan, "Challenges of damascene etching for copper interconnect", Proc. SPIE 3883, 34, 1999.
2. T.N. Theis, "The future of interconnection technology", IBM J. Res. Develop., 44(3), 379, 2000.
3. S. Ding, W. Kang, H. Tanaka, S. Dixit, R. Eakin, J. Shah, E. Gonzalez, Y. Lin, D.N. Khanna, "Optimization of bottom antireflective coating materials for dual damascene process", Proc. SPIE 3999, 910, 2000.
4. M. Padmanaban, S. Ding, S.A. Ficner, W. Kang, D.N. Khanna, R.R. Dammel, "Bottom anti-reflective coatings for ArF, KrF, and I-line applications: a comparison of theory, design, and lithographic aspects", Proc. SPIE 3678, 550, 1999.