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Volumn 15, Issue 4, 1998, Pages 1295-1304

Optical gain in (Zn, Cd)Se-Zn(S, Se) quantum wells

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EID: 3843105576     PISSN: 07403224     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAB.15.001295     Document Type: Article
Times cited : (12)

References (43)
  • 1
    • 36449001139 scopus 로고
    • Operation and dynamics of ZnSe/ZnMgSSe double heterostructure blue laser diode at room temperature
    • H. Okuyama, E. Kato, S. Itoh, N. Nakayama, T. Ohata, and A. Ishibashi, "Operation and dynamics of ZnSe/ZnMgSSe double heterostructure blue laser diode at room temperature," Appl. Phys. Lett. 66, 656-658 (1995).
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 656-658
    • Okuyama, H.1    Kato, E.2    Itoh, S.3    Nakayama, N.4    Ohata, T.5    Ishibashi, A.6
  • 2
    • 0027107745 scopus 로고
    • Properties of the electron-hole plasma in II-VI semiconductors
    • C. Klingshirn, "Properties of the electron-hole plasma in II-VI semiconductors," J. Cryst. Growth 117, 753-756 (1992).
    • (1992) J. Cryst. Growth , vol.117 , pp. 753-756
    • Klingshirn, C.1
  • 3
    • 0000076204 scopus 로고
    • (Zn,Cd)Se/ZnSe quantum-well lasers: Excitonic gain in an inhomogeneously broadened quasi-two-dimensional system
    • J. Ding, M. Hagerott, T. Ishihara, H. Jeon, and A. V. Nurmikko, "(Zn,Cd)Se/ZnSe quantum-well lasers: excitonic gain in an inhomogeneously broadened quasi-two-dimensional system," Phys. Rev. B 47, 10,528-10,542 (1993).
    • (1993) Phys. Rev. B , vol.47
    • Ding, J.1    Hagerott, M.2    Ishihara, T.3    Jeon, H.4    Nurmikko, A.V.5
  • 7
    • 36449003897 scopus 로고
    • Stimulated emission via inelastic exciton-exciton scattering in ZnSe epilayers
    • P. R. Newbury, K. Shazad, and D. A. Cammack, "Stimulated emission via inelastic exciton-exciton scattering in ZnSe epilayers," Appl. Phys. Lett. 58, 1065-1067 (1991).
    • (1991) Appl. Phys. Lett. , vol.58 , pp. 1065-1067
    • Newbury, P.R.1    Shazad, K.2    Cammack, D.A.3
  • 8
    • 0006760261 scopus 로고
    • Blue-light stimulated emission from a localized state formed by well-barrier fluctuation in a II-VI semiconductor superlattice
    • Y. Kuroda, I. Suemune, Y. Gujii, and M. Fujimoto, "Blue-light stimulated emission from a localized state formed by well-barrier fluctuation in a II-VI semiconductor superlattice," Appl. Phys. Lett. 61, 1182-1184 (1992).
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 1182-1184
    • Kuroda, Y.1    Suemune, I.2    Gujii, Y.3    Fujimoto, M.4
  • 9
    • 0001508834 scopus 로고
    • The role of bi-excitons in the stimulated emission of wide-gap II-VI quantum wells
    • F. Kreller, M. Löwisch, J. Puls, and F. Henneberger, "The role of bi-excitons in the stimulated emission of wide-gap II-VI quantum wells," Phys. Rev. Lett. 75, 2420-2423 (1995).
    • (1995) Phys. Rev. Lett. , vol.75 , pp. 2420-2423
    • Kreller, F.1    Löwisch, M.2    Puls, J.3    Henneberger, F.4
  • 10
    • 0001767809 scopus 로고
    • Semiconductor laser theory with many-body effects
    • H. Haug and S. W. Koch, "Semiconductor laser theory with many-body effects," Phys. Rev. A 39, 1887-1898 (1989).
    • (1989) Phys. Rev. A , vol.39 , pp. 1887-1898
    • Haug, H.1    Koch, S.W.2
  • 13
    • 3843105504 scopus 로고
    • Six dB/cm single-pass gain at 7229 Å in lead vapor
    • W. T. Silfvast and J. S. Deech, "Six dB/cm single-pass gain at 7229 Å in lead vapor," Appl. Phys. Lett. 11, 97-99 (1967).
    • (1967) Appl. Phys. Lett. , vol.11 , pp. 97-99
    • Silfvast, W.T.1    Deech, J.S.2
  • 16
  • 17
    • 0029323517 scopus 로고
    • Optical gain in ordered GaInP/AlGaInP quantum wells
    • A. Moritz and A. Hangleiter, "Optical gain in ordered GaInP/AlGaInP quantum wells," Appl. Phys. Lett. 66, 3340-3342 (1995).
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 3340-3342
    • Moritz, A.1    Hangleiter, A.2
  • 18
    • 0016471855 scopus 로고
    • Monolithic measurement of optical gain and absorption in PbTe
    • P. S. Cross and W. G. Oldham, "Monolithic measurement of optical gain and absorption in PbTe," J. Appl. Phys. 46, 952-954 (1975).
    • (1975) J. Appl. Phys. , vol.46 , pp. 952-954
    • Cross, P.S.1    Oldham, W.G.2
  • 19
    • 0028460420 scopus 로고
    • Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser
    • W. W. Chow, R. P. Schneider, Jr., J. A. Lott, and K. D. Choquette, "Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser," Appl. Phys. Lett. 65, 135-137 (1994).
    • (1994) Appl. Phys. Lett. , vol.65 , pp. 135-137
    • Chow, W.W.1    Schneider Jr., R.P.2    Lott, J.A.3    Choquette, K.D.4
  • 22
    • 0024057644 scopus 로고
    • Influence of broadening and high injection on GaAs-AlGaAs quantum well lasers
    • P. Blood, S. Colak, and A. I. Kucharska, "Influence of broadening and high injection on GaAs-AlGaAs quantum well lasers," IEEE J. Quantum Electron. 24, 1593-1604 (1988).
    • (1988) IEEE J. Quantum Electron. , vol.24 , pp. 1593-1604
    • Blood, P.1    Colak, S.2    Kucharska, A.I.3
  • 23
    • 0024738076 scopus 로고
    • Intraband relaxation time in quantum well lasers
    • M. Asada, "Intraband relaxation time in quantum well lasers," IEEE J. Quantum Electron. 25, 2019-2026 (1989).
    • (1989) IEEE J. Quantum Electron. , vol.25 , pp. 2019-2026
    • Asada, M.1
  • 24
    • 0029545338 scopus 로고
    • Implementation of spectral broadening by carrier-carrier scattering in quantum well gain-current calculations
    • P. Rees and P. Blood, "Implementation of spectral broadening by carrier-carrier scattering in quantum well gain-current calculations," Semicond. Sci. Technol. 10, 1545-1554 (1995).
    • (1995) Semicond. Sci. Technol. , vol.10 , pp. 1545-1554
    • Rees, P.1    Blood, P.2
  • 25
    • 36449009283 scopus 로고
    • Calculation of gain-current characteristics in ZnCdSe-ZnSe quantum well structures including many-body effects
    • P. Rees, F. P. Logue, J. F. Donegan, J. F. Heffernan, C. Jordan, and J. Hegarty, "Calculation of gain-current characteristics in ZnCdSe-ZnSe quantum well structures including many-body effects," Appl. Phys. Lett. 67, 3780-3782 (1995).
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 3780-3782
    • Rees, P.1    Logue, F.P.2    Donegan, J.F.3    Heffernan, J.F.4    Jordan, C.5    Hegarty, J.6
  • 26
    • 0026881802 scopus 로고
    • Estimation of critical thickness and band lineups in ZnCdSe/ZnSSe strained-layer system for design of carrier confinement quantum well structures
    • Y.-H. Wu, K. Ichino, Y. Kawakami, Sz. Fujita, and Sg. Fujita, "Estimation of critical thickness and band lineups in ZnCdSe/ZnSSe strained-layer system for design of carrier confinement quantum well structures," Jpn. J. Appl. Phys. 31, 1737-1742 (1992).
    • (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 1737-1742
    • Wu, Y.-H.1    Ichino, K.2    Kawakami, Y.3    Fujita, S.4    Fujita, Sg.5
  • 39
    • 36149004713 scopus 로고
    • Spontaneous emission and stimulated recombination in semiconductors
    • G. Lasher and F. Stern, "Spontaneous emission and stimulated recombination in semiconductors," Phys. Rev. 133, A553-A563 (1964).
    • (1964) Phys. Rev. , vol.133
    • Lasher, G.1    Stern, F.2
  • 40
    • 36449003897 scopus 로고
    • Stimulated emission via inelastic exciton-exciton scattering in ZnSe epilayers
    • P. R. Newbury, K. Shazad, and D. Cammack, Stimulated emission via inelastic exciton-exciton scattering in ZnSe epilayers," Appl. Phys. Lett. 58, 1065-1067 (1991).
    • (1991) Appl. Phys. Lett. , vol.58 , pp. 1065-1067
    • Newbury, P.R.1    Shazad, K.2    Cammack, D.3
  • 41
    • 84996157926 scopus 로고
    • The transition to a metallic state
    • and references therein
    • N. F. Mott, "The transition to a metallic state," Philos. Mag. 6, 287-309 (1961), and references therein.
    • (1961) Philos. Mag. , vol.6 , pp. 287-309
    • Mott, N.F.1
  • 42
    • 0001263012 scopus 로고
    • Universality aspects of the metal-nonmetal transition in condensed media
    • P. P. Edwards and M. J. Sienko, "Universality aspects of the metal-nonmetal transition in condensed media," Phys. Rev. B 17, 2575-2581 (1978).
    • (1978) Phys. Rev. B , vol.17 , pp. 2575-2581
    • Edwards, P.P.1    Sienko, M.J.2
  • 43
    • 84894401593 scopus 로고
    • Dense nonequilibrium excitons: Band edge absorption spectra of highly excited gallium arsenide
    • H. Haug, ed. Academic, Boston
    • R. G. Ulbrich, "Dense nonequilibrium excitons: band edge absorption spectra of highly excited gallium arsenide," in Optical Nonlinearities and Instabilities in Semiconductors, H. Haug, ed. (Academic, Boston, 1988).
    • (1988) Optical Nonlinearities and Instabilities in Semiconductors
    • Ulbrich, R.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.