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Volumn 13, Issue 6, 1996, Pages 1268-1277

Radiative recombination processes in wide-band-gap II-VI quantum wells: The interplay between excitons and free carriers

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EID: 0030558204     PISSN: 07403224     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAB.13.001268     Document Type: Article
Times cited : (71)

References (16)
  • 11
    • 3843148996 scopus 로고    scopus 로고
    • note
    • b represents the unperturbed binding energy of the tree exciton and neglects any contribution of localization at sample inhomogeneities. Note that although localization is not accounted for either in the mass-action law or in the resulting distribution function, we account for localization effects in the calculation of the nonlinear absorption profiles by broadening the Gaussian exciton density of states and the quantum-well (step-function) density of states, using the usual inhomogeneous line-broadening parameter gamma.
  • 16
    • 3843132535 scopus 로고    scopus 로고
    • to be published
    • Biexciton lasing has recently been claimed in ZnCdSe/ZnSe MQW's with extremely sharp luminescence lines. We do not have any evidence of biexciton recombination in the samples investigated in this research. See F. Kreller, M. Lowish, J. Puls, and K. Henneberger, Phys. Rev. Lett. (to be published).
    • Phys. Rev. Lett.
    • Kreller, F.1    Lowish, M.2    Puls, J.3    Henneberger, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.