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Journal of Nanoparticle Research

Volumn 10, Issue 3, 2008, Pages 519-523

Effect of thermal annealing on r.f. sputtering-deposited nanocrystalline GaNxAs1-x thin films

(4) Cardona Bedoya, Jairo A a Cruz Orea, Alfredo a Zelaya Angel, Orlando a Mendoza Alvarez, Julio G a

a DEPARTAMENTO DE FÍSICA (Mexico)

Author keywords

GaNAs semiconductors; Optical properties of nanocrystals; Photoluminescence of nitride compounds

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); NANOCRYSTALLINE MATERIALS; THIN FILMS;

NITRIDE COMPOUNDS; RADIO FREQUENCY (RF);

NANOCRYSTALS;

ARSENIC; GALLIUM; NANOCRYSTAL; NITROGEN;

AMBIENT AIR; ARTICLE; FILM; PHOTOACOUSTIC SPECTROSCOPY; PHOTOLUMINESCENCE; POLARIMETRY; PRIORITY JOURNAL; SEMICONDUCTOR; STRUCTURE ANALYSIS; X RAY DIFFRACTION;

EID: 38349190295 PISSN: 13880764 EISSN: None Source Type: Journal
DOI: 10.1007/s11051-007-9267-x Document Type: Article

Times cited : (2)

References (10)

1
- 0037280517
- 1-x thin films studied by photoacoustic spectroscopy
- 1
- 1-x thin films studied by photoacoustic spectroscopy. Rev Sci Instrum 74(1):854-856
- (2003) Rev Sci Instrum , vol.74 , pp. 854-856
- Cardona-Bedoya, J.A.¹ Cruz-Orea, A.² Tomas-Velazquez, S.A.³ Zelaya-Angel, O.⁴ Mendoza-Alvarez, J.G.⁵

2
- 0009390584
- Interband absorption of light in a semiconductor sphere
- 7
- Éfros AIL, Éfros AL (1982) Interband absorption of light in a semiconductor sphere. Sov Phys Semicond 16(7):772-775
- (1982) Sov Phys Semicond , vol.16 , pp. 772-775
- Éfros, A.I.L.¹ Éfros, A.L.²

3
- 0037041127
- The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy
- 13
- Foxon CT, Harrison I, Novikov SV, Winser AJ, Campion RP (2002) The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy. J Phys Condens Matter 14(13):3383-3397
- (2002) J Phys Condens Matter , vol.14 , pp. 3383-3397
- Foxon, C.T.¹ Harrison, I.² Novikov, S.V.³ Winser, A.J.⁴ Campion, R.P.⁵

4
- 0037343801
- x SQW structure LED grown by laser-assisted metal-organic chemical vapor deposition
- 3
- x SQW structure LED grown by laser-assisted metal-organic chemical vapor deposition. Solid-State Electron 47(3):523-527
- (2003) Solid-State Electron , vol.47 , pp. 523-527
- Kikawa, J.¹ Yoshida, S.² Itoh, Y.³

5
- 0000697511
- x As quantum well structures
- 8
- x As quantum well structures. Phys Rev B 26(8):4449-4457
- (1982) Phys Rev B , vol.26 , pp. 4449-4457
- Mailhiot, C.¹ Chang, Y.-C.² Mc Gill, T.C.³

6
- 0000970220
- Extrinsic photoluminescence from GaAs quantum wells
- 6
- Miller RC, Gossard AC, Tsang WT, Munteanu O (1982) Extrinsic photoluminescence from GaAs quantum wells. Phys Rev B 25(6):3871-3877
- (1982) Phys Rev B , vol.25 , pp. 3871-3877
- Miller, R.C.¹ Gossard, A.C.² Tsang, W.T.³ Munteanu, O.⁴

7
- 0029346154
- High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures
- Nakamura S, Senoh M, Iwasa N, Nagahama S (1995) High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures. Jpn J Appl Phys 34(7A) Part 2, 797-799
- (1995) Jpn J Appl Phys , vol.34 , Issue.7 A PART 2 , pp. 797-799
- Nakamura, S.¹ Senoh, M.² Iwasa, N.³ Nagahama, S.⁴

8
- 0032686790
- InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN
- 7
- Nakamura S (1999) InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN. J Mater Res 14(7):2716-2731
- (1999) J Mater Res , vol.14 , pp. 2716-2731
- Nakamura, S.¹

9
- 0016873312
- Theory of the photoacoustic effect with solids
- 1
- Rosencwaig A, Gersho A (1976) Theory of the photoacoustic effect with solids. J Appl Phys 47(1):64-69
- (1976) J Appl Phys , vol.47 , pp. 64-69
- Rosencwaig, A.¹ Gersho, A.²

10
- 0000733073
- 3
- 1
- 3. J Appl Phys 88(1):188-195
- (2000) J Appl Phys , vol.88 , pp. 188-195
- Willmott, P.R.¹ Antoni, F.² Döbeli, M.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.