-
1
-
-
0025414837
-
Ductile-regime machining of germanium and silicon
-
Blake, P. N. and Scattergood, R. O. Ductile-regime machining of germanium and silicon. J. Ame. Ceramic Soc., 1990, 73(4), 949-957.
-
(1990)
J. Ame. Ceramic Soc
, vol.73
, Issue.4
, pp. 949-957
-
-
Blake, P.N.1
Scattergood, R.O.2
-
2
-
-
0000770395
-
Energy scaling transitions in machining of silicon by diamond
-
Puttick, K. E., Whitmore, L. C., Zhdan, P., Gee, A. E., and Chao, C. L. Energy scaling transitions in machining of silicon by diamond. Tribology Int., 1995, 28(6), 349-355.
-
(1995)
Tribology Int
, vol.28
, Issue.6
, pp. 349-355
-
-
Puttick, K.E.1
Whitmore, L.C.2
Zhdan, P.3
Gee, A.E.4
Chao, C.L.5
-
3
-
-
0031644050
-
Diamond cutting of silicon with nanometric finish
-
Fang, F. Z. and Venkatesh, V. C. Diamond cutting of silicon with nanometric finish. Ann. CIRP, 1998, 47(1), 45-49.
-
(1998)
Ann. CIRP
, vol.47
, Issue.1
, pp. 45-49
-
-
Fang, F.Z.1
Venkatesh, V.C.2
-
4
-
-
0031701882
-
Diamond turning of silicon substrates in ductile-regime
-
Leung, T. P., Lee, W. B., and Lu, X. M. Diamond turning of silicon substrates in ductile-regime. J. Mater. Processing Technol., 1998, 73, 42-48.
-
(1998)
J. Mater. Processing Technol
, vol.73
, pp. 42-48
-
-
Leung, T.P.1
Lee, W.B.2
Lu, X.M.3
-
5
-
-
0035157059
-
On the ductile machining of silicon for micro electro-mechanical systems (MEMS), opto-electronic and optical applications
-
Yan, J., Yoshino, M., Kuriyagawa, T., Shirakashi, T., Syoji, K., and Komanduri, R. On the ductile machining of silicon for micro electro-mechanical systems (MEMS), opto-electronic and optical applications. Mater. Sci. Engng A, 2001, 297(1/2), 230-234.
-
(2001)
Mater. Sci. Engng A
, vol.297
, Issue.1-2
, pp. 230-234
-
-
Yan, J.1
Yoshino, M.2
Kuriyagawa, T.3
Shirakashi, T.4
Syoji, K.5
Komanduri, R.6
-
6
-
-
0042275170
-
Modeling of ductile cutting of tungsten carbide
-
Liu, K. and Li, X. P. Modeling of ductile cutting of tungsten carbide. Trans. NAMRI/SME, 2001, XXIX, 251-258.
-
(2001)
Trans. NAMRI/SME
, vol.29
, pp. 251-258
-
-
Liu, K.1
Li, X.P.2
-
7
-
-
0000932853
-
Interface tribology by nonequilibrium molecular dynamics fabrication technology
-
Hoover, W. G., Hoover, C. G., and Stowers, I. F. Interface tribology by nonequilibrium molecular dynamics fabrication technology. Mater. Res. Soc. Symp., 1989, 140, 119-122.
-
(1989)
Mater. Res. Soc. Symp
, vol.140
, pp. 119-122
-
-
Hoover, W.G.1
Hoover, C.G.2
Stowers, I.F.3
-
8
-
-
0002139785
-
Molecular dynamics model of the orthogonal cutting process
-
Rochester, New York, September
-
Belak, J. and Stowers, I. F. Molecular dynamics model of the orthogonal cutting process. In Proceedings of ASPE Annual Conference, Rochester, New York, September 1990, pp.76-79.
-
(1990)
Proceedings of ASPE Annual Conference
, pp. 76-79
-
-
Belak, J.1
Stowers, I.F.2
-
9
-
-
0030689371
-
Brittle/ ductile transition phenomena observed in computer simulations of machining defect-free monocrystalline silicon
-
Inamura, T., Shimada, S., and Nakahara, N. Brittle/ ductile transition phenomena observed in computer simulations of machining defect-free monocrystalline silicon. Ann. CIRP, 1997, 46, 31-34.
-
(1997)
Ann. CIRP
, vol.46
, pp. 31-34
-
-
Inamura, T.1
Shimada, S.2
Nakahara, N.3
-
10
-
-
0032689334
-
Crack iniation in machining monocrystalline silicon
-
Inamura, T., Shimada, S., Takezawa, N., and Ikawa, N. Crack iniation in machining monocrystalline silicon. Ann. CIRP, 1999, 48, 81-84.
-
(1999)
Ann. CIRP
, vol.48
, pp. 81-84
-
-
Inamura, T.1
Shimada, S.2
Takezawa, N.3
Ikawa, N.4
-
11
-
-
0025846563
-
An atomistic analysis of nanometric chip removal as affected by tool-work interaction in diamond turning
-
Ikawa, N., Shimada, S., Tanaka, H., and Ohmori, G. An atomistic analysis of nanometric chip removal as affected by tool-work interaction in diamond turning. Ann. CIRP, 1991, 40, 551-554.
-
(1991)
Ann. CIRP
, vol.40
, pp. 551-554
-
-
Ikawa, N.1
Shimada, S.2
Tanaka, H.3
Ohmori, G.4
-
12
-
-
0002331142
-
Molecular dynamics analysis of nanometric cutting process
-
Shimada, S. Molecular dynamics analysis of nanometric cutting process. Int. J. Jap. Soc. Precision Engng, 1995, 29, 283-286.
-
(1995)
Int. J. Jap. Soc. Precision Engng
, vol.29
, pp. 283-286
-
-
Shimada, S.1
-
13
-
-
0028136011
-
Structure of micromachined surface simulated by molecular dynamics analysis
-
Shimada, S., Ikawa, N., Ohmori, G., Tanaka, H., and Uchikoshi, J. Structure of micromachined surface simulated by molecular dynamics analysis. Ann. CIRP, 1994, 43, 51-54.
-
(1994)
Ann. CIRP
, vol.43
, pp. 51-54
-
-
Shimada, S.1
Ikawa, N.2
Ohmori, G.3
Tanaka, H.4
Uchikoshi, J.5
-
14
-
-
0028099128
-
Molecular dynamics simulation for abrasive process
-
Rentch, R. and Inasaki, I. Molecular dynamics simulation for abrasive process. Ann. CIRP, 1994, 43, 327-330.
-
(1994)
Ann. CIRP
, vol.43
, pp. 327-330
-
-
Rentch, R.1
Inasaki, I.2
-
15
-
-
0034275536
-
Three-dimensional molecular dynamics analysis of processing using a pin tool on the atomic scale
-
Fang, T. H. and Weng, C. Three-dimensional molecular dynamics analysis of processing using a pin tool on the atomic scale. Nanotechnol, 2000, 11, 148-153.
-
(2000)
Nanotechnol
, vol.11
, pp. 148-153
-
-
Fang, T.H.1
Weng, C.2
-
16
-
-
0037347678
-
Molecular dynamics simulation of nanoscale machining of copper
-
Ye, Y. Y., Biswas, R., Morris, T. R., Bastawros, A., and Chandra, A. Molecular dynamics simulation of nanoscale machining of copper. Nanotechnol, 2003, 14, 390-396.
-
(2003)
Nanotechnol
, vol.14
, pp. 390-396
-
-
Ye, Y.Y.1
Biswas, R.2
Morris, T.R.3
Bastawros, A.4
Chandra, A.5
-
17
-
-
0032131262
-
Atomic scale deformation in silicon monocrystals induced by two-body and threebody contact sliding
-
Zhang, L. C. and Tanaka, H. Atomic scale deformation in silicon monocrystals induced by two-body and threebody contact sliding. Tribology Int., 1998, 31, 425-433.
-
(1998)
Tribology Int
, vol.31
, pp. 425-433
-
-
Zhang, L.C.1
Tanaka, H.2
-
18
-
-
0033324426
-
On the mechanics and physics in the nano-indentation of silicon monocrystals
-
Zhang, L. C. and Tanaka, H. On the mechanics and physics in the nano-indentation of silicon monocrystals. JSME Int. J. Ser. A, 1999, 42, 546-559.
-
(1999)
JSME Int. J. Ser. A
, vol.42
, pp. 546-559
-
-
Zhang, L.C.1
Tanaka, H.2
-
19
-
-
0034274514
-
Molecular dynamics simulation of phase transformation in silicon monocrystals due to nano-indentation
-
Cheong, W. C. D. and Zhang, L. C. Molecular dynamics simulation of phase transformation in silicon monocrystals due to nano-indentation. Nanotechnol, 2000, 11, 173-180.
-
(2000)
Nanotechnol
, vol.11
, pp. 173-180
-
-
Cheong, W.C.D.1
Zhang, L.C.2
-
20
-
-
0032483165
-
Effect of tool geometry in nanometric cutting: A molecular dynamics simulation approach
-
Komanduri, R., Chandrasekaran, N., and Raff, L. M. Effect of tool geometry in nanometric cutting: a molecular dynamics simulation approach. Wear, 1998, 219, 84-97.
-
(1998)
Wear
, vol.219
, pp. 84-97
-
-
Komanduri, R.1
Chandrasekaran, N.2
Raff, L.M.3
-
21
-
-
0035783643
-
Molecular dynamics simulation of the nanometric cutting of silicon
-
Komanduri, R., Chandrasekaran, N., and Raff, L. M. Molecular dynamics simulation of the nanometric cutting of silicon. Phil. Mag. B, 2001, 81, 1989-2019.
-
(2001)
Phil. Mag. B
, vol.81
, pp. 1989-2019
-
-
Komanduri, R.1
Chandrasekaran, N.2
Raff, L.M.3
-
22
-
-
33947221437
-
A study of the effect of tool cutting edge radius on ductile cutting of silicon wafers
-
Liu, K., Li, X. P., Rahman, M., Neo, K. S., and Liu, X. D. A study of the effect of tool cutting edge radius on ductile cutting of silicon wafers. Int. J. Adv. Mfg Technol., 2007, 32, 631-647.
-
(2007)
Int. J. Adv. Mfg Technol
, vol.32
, pp. 631-647
-
-
Liu, K.1
Li, X.P.2
Rahman, M.3
Neo, K.S.4
Liu, X.D.5
-
23
-
-
33845754380
-
The upper bound of tool edge radius for nanoscale ductile cutting of silicon wafer
-
Arefin, S., Li, X. P., Rahman, M., and Liu, K. The upper bound of tool edge radius for nanoscale ductile cutting of silicon wafer. Int. J. Adv. Mfg Technol., 2007, 31, 655-662.
-
(2007)
Int. J. Adv. Mfg Technol
, vol.31
, pp. 655-662
-
-
Arefin, S.1
Li, X.P.2
Rahman, M.3
Liu, K.4
-
25
-
-
27744577658
-
Modeling solid-state chemistry: Interatomic potentials for multicomponent systems
-
Tersoff, J. Modeling solid-state chemistry: Interatomic potentials for multicomponent systems. Phys. Rev. B, 1989, 39, 5566-5568.
-
(1989)
Phys. Rev. B
, vol.39
, pp. 5566-5568
-
-
Tersoff, J.1
-
26
-
-
0000484342
-
Interatomic potentials formonoatomic metals from experimental data and ab initio calculations
-
Mishin, Y., Parkas, D., Mehl, M. J., and Papaconstantopoulos, D. A. Interatomic potentials formonoatomic metals from experimental data and ab initio calculations. Phys. Rev. B, 1999, 59, 3393-3407.
-
(1999)
Phys. Rev. B
, vol.59
, pp. 3393-3407
-
-
Mishin, Y.1
Parkas, D.2
Mehl, M.J.3
Papaconstantopoulos, D.A.4
-
28
-
-
0036147530
-
Representation of mechanical loads in molecular dynamics simulation
-
paper number 014107
-
Fabrizio, C. Representation of mechanical loads in molecular dynamics simulation. Phys. Rev. B, 2001, 65, paper number 014107.
-
(2001)
Phys. Rev. B
, vol.65
-
-
Fabrizio, C.1
-
29
-
-
33845443659
-
Crack initiation in relation to the tool edge radius and cutting conditionsin nanoscale cutting of silicon
-
Cai, M. B., Li, X. P., and Rahman, M. Crack initiation in relation to the tool edge radius and cutting conditionsin nanoscale cutting of silicon. Int. J. Machine Tools Mf., 2007, 47, 562-569.
-
(2007)
Int. J. Machine Tools Mf
, vol.47
, pp. 562-569
-
-
Cai, M.B.1
Li, X.P.2
Rahman, M.3
-
30
-
-
0000109186
-
First-principles pseudopotential study of the structural phase of silicon
-
Needs, J. and Mujica, A. First-principles pseudopotential study of the structural phase of silicon. Phys. Rev. B, 1995, 51, 9652-9660.
-
(1995)
Phys. Rev. B
, vol.51
, pp. 9652-9660
-
-
Needs, J.1
Mujica, A.2
-
32
-
-
4444368021
-
Hardness of covalent crystals
-
paper number 015502
-
Gao, F., He, J., Wu, E., Liu, S., Yu, D., Liu, D., Zhang, S., and Tian, Y. Hardness of covalent crystals. Phys. Rev. Lett., 2003, 91, paper number 015502.
-
(2003)
Phys. Rev. Lett
, vol.91
-
-
Gao, F.1
He, J.2
Wu, E.3
Liu, S.4
Yu, D.5
Liu, D.6
Zhang, S.7
Tian, Y.8
|