Compositional dependence of the physical properties in a-Ge-Se-In glassy semiconductor

Physica B: Condensed Matter

Volumn 403, Issue 4, 2008, Pages 624-630

  Sharma, Ishu ^a   Tripathi, S K ^b   Barman, P B ^a  

^a JAYPEE UNIVERSITY OF INFORMATION TECHNOLOGY   (India)

^b PANJAB UNIVERSITY   (India)

Author keywords

Cohesive energy; Glass transition temperature; Heat of atomization; Mean bond energy; Structure compactness

Indexed keywords

ALLOYS; ATOMIZATION; GERMANIUM; GLASS TRANSITION; SEMICONDUCTING SELENIUM; STRUCTURE (COMPOSITION);

COHESIVE ENERGY; MEAN BOND ENERGY; OPTICAL BAND GAP; PHILLIPS-THORPE TOPOLOGICAL MODELS;

SUPERCONDUCTING TRANSITION TEMPERATURE;

EID: 38049076782     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.09.065     Document Type: Article

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