Theoretical investigation of the correlation between the arbitrarily defined optical gap energy and the chemical bond in Te46-xAs32+xGe10Si12 system

Vacuum

Volumn 52, Issue 4, 1999, Pages 505-508

  Fouad, S S ^a  

^a Ain Shams University   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ATOMIZATION; CALCULATIONS; CHEMICAL BONDS; ENERGY GAP; GLASS TRANSITION; POWDERS; SEMICONDUCTING GLASS; TEMPERATURE; THIN FILMS; VACUUM APPLICATIONS; X RAY ANALYSIS;

INDEX OF ATOMIC MOBILITY; INDEX OF THE COVALENT BOND STRENGTH; OPTICAL ENERGY GAP;

SEMICONDUCTING TELLURIUM COMPOUNDS;

EID: 0033115009     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(98)00339-X     Document Type: Article

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