Persistent photoconductivity in amorphous As2Se3 films with Sn impurity

Journal of Optoelectronics and Advanced Materials

Volumn 5, Issue 5, 2003, Pages 1115-1120

  Harea, D V ^a   Vasilev, I A ^a   Colomeico, E P ^a   Iovu, M S ^a  

^a Center of Optoelectronics   (Moldova)

Author keywords

Amorphous As2Se3 films; Defect states; Persistent photoconductivity

Indexed keywords

ARSENIC COMPOUNDS; ELECTRODES; ELECTRON TRAPS; ENERGY GAP; IMPURITIES; LIGHT TRANSMISSION; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SYNTHESIS (CHEMICAL); TIN;

DEFECT STATES; PHOTOCAPACITANCE;

AMORPHOUS FILMS;

EID: 0346243671     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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