A chevron specimen for the measurement of mixed-mode interface toughness of wafer bonds

Engineering Fracture Mechanics

Volumn 75, Issue 6, 2008, Pages 1310-1319

  Tadepalli, R ^a   Turner, K T ^b  

^a Massachusetts Institute of Technology   (United States)

^b University of Wisconsin Madison   (United States)

Author keywords

Electronics; Interface fracture

Indexed keywords

ADHESION; CRACKS; FINITE ELEMENT METHOD; FRACTURE; INTERFACES (MATERIALS); SEMICONDUCTOR MATERIALS; SUBSTRATES; TOUGHNESS;

INTERFACE TOUGHNESS; INTERFACIAL ADHESION;

WAFER BONDING;

ADHESION; CRACKS; FINITE ELEMENT METHOD; FRACTURE; INTERFACES (MATERIALS); SEMICONDUCTOR MATERIALS; SUBSTRATES; TOUGHNESS; WAFER BONDING;

EID: 38049000853     PISSN: 00137944     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.engfracmech.2007.07.009     Document Type: Article

References (20)

1. Fan A., Rahman A., and Reif R. Copper wafer bonding. Electrochem Solid State Lett 2 10 (1999) 534-536
2. Schmidt M.A. Wafer-to-wafer bonding for microstructure formation. Proc IEEE 86 8 (1998) 1575-1585
3. Celler G.K., and Cristoloveanu S. Frontiers of silicon-on-insulator. J Appl Phys 93 9 (2003) 4955-4978
4. Plößl A., and Kräuter G. Wafer direct bonding: tailoring adhesion between brittle materials. Mater Sci Engng R 25 1-2 (1999) 1-88
5. Cozma A., and Puers R. Characterization of the electrostatic bonding of silicon and pyrex glass. J Micromech Microengng 5 2 (1995) 98-102
6. Eaton W.P., and Risbud S.H. Silicon wafer-to-wafer bonding at T < 200 °C with polymethylmethacrylate. Appl Phys Lett 65 4 (1994) 439-441
7. Blom M.T., Tas N.R., Pandraud G., Chmela E., Gardeniers J.G.E., Tijssen R., et al. Failure mechanisms of pressurized microchannels, model, and experiments. J Microelectromech Syst 10 1 (2001) 158-164
8. Farrens SN, Roberds BE, Smith JK, Hunt CE. Analysis of bond characteristics in Si direct-bonded materials. In: Proceedings of the second international symposium on semiconductor wafer bonding: science, technology, and applications, 1993. p. 81-95.
9. Maszara W.P., Goetz G., Caviglia A., and McKitterick B. Bonding of silicon wafers for silicon on insulator. J Appl Phys 64 10 (1988) 4943-4950
10. Charalambides P.G., Lund J., Evans A.G., and McMeeking R.M. A test specimen for determining the fracture resistance of bimaterial interfaces. J Appl Mech 56 1 (1989) 77-82
11. Hurd D.S., Caretta R., and Gerberich W.W. An experimental fracture mechanics study of a strong interface: the silicon/glass anodic bond. J Mater Res 10 2 (1995) 387-400
12. Bagdahn J., Petzold M., Plößl A., and Wiemer M. Measurement of the local strength distribution of directly bonded silicon wafers using the micro-chevron test. Electrochem Soc Proc 99 35 (2001) 218-223
13. Dauskardt R.H., Lane M., Ma Q., and Krishna N. The adhesion and debonding of multi-layer thin film structures. Engng Fracture Mech 61 1 (1998) 141-162
14. Vallin O., Jonsson K., and Lindberg U. Adhesion quantification methods for wafer bonding. Mater Sci Eng R 50 4-5 (2005) 109-165
15. Turner KT, Ayon AA, Choi D, Miller B, Spearing SM. Characterization of silicon fusion bonds using a four-point bend specimen. In: MRS proceedings: materials science of microelectromechanical systems (MEMS) Devices III, vol. 657. 2000. p. EE631-6.
16. Newman JC Jr. A review of chevron-notched fracture specimens. In: Underwood JH, Freiman SW, Baratta FI, editors. Chevron-notched specimens: testing and stress analysis, ASTM STP 855, 1984. p. 5.
17. In: Brown K.R., and Baratta F.I. (Eds). Chevron-notch fracture test experience: metals and non-metals (1992), ASTM, Philadelphia PA
18. Barker L.M. A simplified method for measuring plane strain fracture toughness. Engng Fracture Mech 9 2 (1977) 361-369
19. Krueger R. The virtual crack closure technique: history, approach and applications. Appl Mech Rev 57 (2004) 109-143
20. Hutchinson J.W., and Suo Z. Mixed mode cracking in layered materials. Adv Appl Mech 29 (1992) 63-191