CMOS Image Sensors With Self-Powered Generation Capability

IEEE Transactions on Circuits and Systems II: Express Briefs

Volumn 53, Issue 11, 2006, Pages 1210-1214

  Yadid Pecht, Orly ^a,b   Hamami, Shy ^a  

^a VLSI Systems Center   (Israel)

^b UNIVERSITY OF CALGARY   (Canada)

Author keywords

Active pixel sensor (APS); low power sensor; power generated photo diode (PGPd); self powered sensor (SPS)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ENERGY DISSIPATION; INTEGRATED CIRCUIT MANUFACTURE; PHOTODIODES; POWER GENERATION;

ACTIVE PIXEL SENSOR (APS); LOW-POWER SENSOR; POWER GENERATED PHOTO DIODE (PGPD); SELF-POWERED SENSOR (SPS);

IMAGE SENSORS;

EID: 37849188611     PISSN: 15497747     EISSN: 15583791     Source Type: Journal    
DOI: 10.1109/TCSII.2006.882858     Document Type: Article

References (14)

1. H. S. Wong, R. T. Chang, E. Crabbe, and P. D. Agneelo, “CMOS active pixel image sensors fabricated using a 1.8 V, 0.25-μm CMOS technology,” IEEE Trans. Electron Devices, vol. 45, no. 4, pp. 889–894, Apr. 1998.
2. C. Xu, W. Zhang, and M. Chan, “A low-voltage hybrid bulk/SOI CMOS active pixel image sensor,” IEEE Electron Device Lett., vol. 22, pp. 248–250, 2001.
3. S. Y. Ma and L.-G. Chen, “A single-chip CMOS APS camera with direct frame difference output,” IEEE J. Solid-State Circuits, vol. 34, no. 10, pp. 1415–1418, Oct. 1999.
4. X. Zheng, G. Yang, C. Wrigley, and B. Pain, “High responsivity CMOS imager pixel implemented in SOI technology,” in Proc. 2000 IEEE Int. SOI Conf., Oct. 2–5, 2000, pp. 138–139.
5. W. Fang, G. Yang, B. Pain, and B. J. Sheu, “A low power smart vision system based on active pixel sensor integrated with programmable neural processor,” in Proc. ICCD, 1997, pp. 429–434.
6. L. G. Mcllrath, “A low-power low-noise ultrawide-dynamic-range CMOS imager with pixel-parallel A/D conversion,” IEEE J. Solid-State Circuits, vol. 36, no. 5, pp. 846–853, May 2001.
7. C. Xu, W. Ki, and M. Chan, “A low-voltage CMOS complementary active pixel sensor (CAPS) fabricated using a 0.25-μm CMOS technology,” IEEE Trans. Electron Devices, vol. 49, no. 7, pp. 398–400, Jul. 2002.
8. K. Cho, A. I. Krymski, and E. R. Fossum, “A 1.5-V 550μW 176 x 144 autonomous CMOS active pixel image sensor,” IEEE Trans. Electron Devices, vol. 50, no. 1, pp. 96–105, Jan. 2003.
9. A. Fish, A. Belenky, and O. Yadid-Pecht, “Low power global shutter CMOS active pixel image sensor with ultrahigh dynamic range,” in Proc. IEEE 11th Int. Conf. Electronics, Circuits, Syst., Dec. 13–15, 2004, pp. 149–152.
10. R. M. Philipp and R. Etienne-Cummings, “A 1 V current-mode CMOS active pixel sensor,” in Proc. IEEE ISCAS’05, Kobe, Japan, May 2005, pp. 4771–4773.
11. A. Fish, S. Hamami, and O. Yadid-Pecht, “Self-powered active pixel sensors for ultra low-power applications,” in Proc. IEEE ISCAS’05, Kobe, Japan, May 2005, pp. 5310–5313.
12. O. Yadid-Pecht and R. Etienne-Cummings, CM OS Imagers: From Phototransduction to Image Processing. Norwell, MA: Kluwer.
13. Z. Chen, L. Wei, and K. Roy, “Estimation of standby leakage power in CMOS circuits considering accurate modeling of transistor stacks,” in Proc. Int. Symp. Low Power Electron. Design, 1998, pp. 239–244.
14. S. Mendis, S. Kemeny, R. Gee, B. Pain, C. Staller, Q. Kim, and E. Fossum, “CMOS active pixel image sensors for highly integrated imaging systems,” IEEE J. Solid-State Circuits, vol. 32, no. 2, pp. 187–197, Feb. 1997.