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Volumn , Issue , 2005, Pages 4771-4774

A 1V current-mode cmos active pixel sensor

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE PIXEL SENSOR; ANALYSIS AND SIMULATION; CMOS ACTIVE PIXEL SENSORS; CONVERSION GAIN; CURRENT MODE; FILL FACTOR; INTEGRATED VOLTAGE; LINEAR REGION; LINEARLY PROPORTIONAL; LOW-VOLTAGE; OUTPUT CURRENT; PMOS TRANSISTORS; POWER SUPPLY; STANDARD CMOS PROCESS;

EID: 37949013773     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCAS.2005.1465699     Document Type: Conference Paper
Times cited : (7)

References (8)
  • 1
    • 0037253141 scopus 로고    scopus 로고
    • A 1.5V 550 μW 176?144 autonomous CMOS active pixel image sensor
    • Jan
    • K.B. Cho, A.I. Krymski, and E.R. Fossum, "A 1.5V 550 μW 176?144 autonomous CMOS active pixel image sensor," IEEE Trans. Electron Devices, vol. 50, pp. 96-105, Jan. 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , pp. 96-105
    • Cho, K.B.1    Krymski, A.I.2    Fossum, E.R.3
  • 2
    • 0036908814 scopus 로고    scopus 로고
    • DD CMOS active-pixel sensor with complementary pixel architecture and pulsewidth modulation fabricated with a 0.25μm CMOS process
    • Dec
    • DD CMOS active-pixel sensor with complementary pixel architecture and pulsewidth modulation fabricated with a 0.25μm CMOS process," IEEE. J. Solid-State Circuits, vol. 37, pp. 1853-1859, Dec. 2002.
    • (2002) IEEE. J. Solid-State Circuits , vol.37 , pp. 1853-1859
    • Xu, C.1    Zhang, W.2    Ki, W.-H.3    Chan, M.4
  • 4
  • 5
    • 0030378204 scopus 로고    scopus 로고
    • Technology and device scaling considerations for CMOS imagers
    • Dec
    • H.-S. Wong, "Technology and device scaling considerations for CMOS imagers," IEEE Trans. Electron Devices, vol. 43, pp. 2131-2142, Dec. 1996.
    • (1996) IEEE Trans. Electron Devices , vol.43 , pp. 2131-2142
    • Wong, H.-S.1
  • 6
    • 0001178444 scopus 로고    scopus 로고
    • CMOS active pixel image sensors fabricated using a 1.8V, 0.25μm CMOS technology
    • April
    • H.-S. P. Wong, R.T. Chang, E. Crabbé, and P.D. Agnello, "CMOS active pixel image sensors fabricated using a 1.8V, 0.25μm CMOS technology," IEEE Trans. Electron Devices, vol. 45, pp. 889-894, April 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 889-894
    • Wong, H.-S.P.1    Chang, R.T.2    Crabbé, E.3    Agnello, P.D.4
  • 7
    • 35648967588 scopus 로고    scopus 로고
    • A new digital-pixel architecture for CMOS image sensor with pixel-level ADC and pulse width modulation using a 0.18μm CMOS technology
    • Dec
    • C. Xu, C. Shen, A. Bermak, and M. Chan, "A new digital-pixel architecture for CMOS image sensor with pixel-level ADC and pulse width modulation using a 0.18μm CMOS technology," 2003 IEEE Conf. Electron Dev. & Solid-State Circuits, pp. 265-268, Dec. 2003.
    • (2003) 2003 IEEE Conf. Electron Dev. & Solid-State Circuits , pp. 265-268
    • Xu, C.1    Shen, C.2    Bermak, A.3    Chan, M.4
  • 8
    • 0033226198 scopus 로고    scopus 로고
    • Very wide range tuneable CMOS/bipolar current mirrors with voltage clamped input
    • Nov
    • T. Serrano-Gotarredona, B. Linares-Barranco, and A.G. Andreou, "Very wide range tuneable CMOS/bipolar current mirrors with voltage clamped input," IEEE Trans. Circuits Syst. I, vol. 46, pp. 1398-1407, Nov. 1999.
    • (1999) IEEE Trans. Circuits Syst. I , vol.46 , pp. 1398-1407
    • Serrano-Gotarredona, T.1    Linares-Barranco, B.2    Andreou, A.G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.