The different behavior of nitrogen and phosphorus as n-type dopants in SiC

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 184-189

  Rauls, E ^a   Gerstmann, U ^a   Frauenheim, Th ^a   Overhof, H ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

Annealing; Doping; Hyperfine interaction; Nitrogen; Phosphorus; SiC

Indexed keywords

ANNEALING; CARBON; CHEMICAL ACTIVATION; COMPLEXATION; ELECTRONIC STRUCTURE; NITROGEN; PARAMAGNETIC RESONANCE; PHOSPHORUS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

HYPERFINE INTERACTION; RECOMBINATION BEHAVIOR;

SILICON CARBIDE;

EID: 0345873485     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.234     Document Type: Conference Paper

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