Age-induced oxide on cleaved surface of layered GaSe single crystals

Applied Surface Science

Volumn 254, Issue 7, 2008, Pages 2067-2071

  Drapak, S I ^a   Gavrylyuk, S V ^a   Kovalyuk, Z D ^a   Lytvyn, O S ^b  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Atomic force microscopy (AFM); Electrical properties; Gallium selenide; Humidity sensing; Intrinsic oxide; X ray diffraction (XRD)

Indexed keywords

ATMOSPHERIC HUMIDITY; ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; GALLIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SURFACE ANALYSIS; X RAY DIFFRACTION;

CHEMICAL COMPOSITIONS; CLEAVED SURFACE; GALLIUM SELENIDE; HUMIDITY SENSING; INTRINSIC OXIDE;

SINGLE CRYSTALS;

EID: 37749050551     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.08.034     Document Type: Article

References (21)

1. Drapak S.I., and Kovalyuk Z.D. Tech. Phys. Lett. 27 (2001) 775
2. Drapak S.I., Katerynchyk, and Kovalyuk Z.D. Thin Solid Films 515 (2007) 6356
3. Gautam U.K., Vivekchand S.R.C., Govindaraj A., Kulkarni G.U., Selvi N.R., and Rao C.N.R. J. Am. Chem. Soc. 127 (2005) 3658
4. Gautam U.K., Vivekchand S.R.C., Govindaraj A., and Rao R. Chem. Commun. 31 (2005) 3995
5. Bakhtinov A.P., Vodop'yanov V.N., Slyn'ko E.I., Kovalyuk Z.D., and Lytvyn O.S. Tech. Phys. Lett. 33 (2007) 86
6. Balitskii O.A., Savchyn V.P., and Yukhymchuk V.O. Semicond. Sci. Technol. 17 (2002) L1
7. Drapak S.I., Manasson V.A., Netyaga V.V., and Kovalyuk Z.D. Semiconductors 37 (2003) 172
8. Drapak S.I., Orletskii V.B., and Kovalyuk Z.D. Semiconductors 38 (2004) 546
9. Tutov E.A., Bormontov E.N., Pavlenko M.N., Netesova G.A., and Tutov E.E. Tech. Phys. 50 (2005) 1048
10. Bogoroditskii N.P., Volokobinskii Yu.M., Vorob'ev A.A., and Tareev B.M. The theory of dielectrics (1965), Energy, Moscow, Leningrad (in Russian)
11. Inorganic Crystal Structure Database (ICSD), Gmelin-Institut für Anorganische Chemie and Fachinformationszentrum FIZ Karlsruhe, 1995.
12. Sze M.S. J. Appl. Phys. 38 (1967) 2951
13. Passlack M., Hunt N.E.J., Schubert E.F., Zydzik G.J., Hong M., Mannaerts J.P., Opila R.L., and Fischer R.J. Appl. Phys. Lett. 64 (1994) 2715
14. Mott N.F., and Davis E.A. Electronic Processes in Non-Crystalline Materials (1979), Clarendon, Oxford
15. Bulyarskii S.V., Ionychev V.K., and Kuz'min V.V. Semiconductors 37 (2003) 115
16. Sze S.M. Physics of Semiconductor Devices. 2nd ed. (1981), Wiley Interscience Publication, New York
17. Hariu T., Sasaki S., Adachi H., and Shibata Y. Jpn. J. Appl. Phys. 16 (1977) 841
18. Ogita M., Saika N., Nakanishi Y., and Hatanaka Y. Appl. Surf. Sci. 142 (1999) 188
19. Ogita M., Yuasa S., Kobayashi K., Yamada Y., Nakanishi Y., and Hatanaka Y. Appl. Surf. Sci. 212/213 (2003) 397
20. Kohl D., Ochs Th., Geyer W., Fleischer M., and Meixner H. Sens. Actuator B: Chem. 59 (1999) 140
21. Arean C.O., Bellan A.L., Mentruit M.P., Delgado M.R., and Palomino G.T. Micropor. Mesopor. Mater. 40 (2000) 35