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Volumn 37, Issue 1, 2003, Pages 115-118

Tunneling recombination in silicon avalanche diodes

Author keywords

[No Author keywords available]

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EID: 0037273392     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1538550     Document Type: Article
Times cited : (3)

References (8)
  • 1
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    • 1. S. V. Bulyarskii N. S. Grushko 2000 Zh. Éksp. Teor. Fiz. 118 1222 [JETP 91, 1059 (2000)] S. V. Bulyarskii and N. S. Grushko, Zh. Éksp. Teor. Fiz. 118, 1222 (2000) [JETP 91, 1059 (2000)].
    • (2000) Zh. Éksp. Teor. Fiz. , vol.118 , pp. 1222
    • Bulyarskii, S.V.1    Grushko, N.S.2
  • 2
    • 85121071699 scopus 로고    scopus 로고
    • 2. P. V. Akimov, Yu. N. Serezhkin, and V. M. Fedoseev, Available from VINITI, No. 8126-V (1985).
  • 3
    • 0003612204 scopus 로고
    • Imperfections and Impurities in Semiconducting Silicon
    • 3. K. V. Ravi 1981 Imperfections and Impurities in Semiconducting Silicon Wiley New York K. V. Ravi, Imperfections and Impurities in Semiconducting Silicon (Wiley, New York, 1981; Mir, Moscow, 1984).
    • (1981)
    • Ravi, K.V.1
  • 4
    • 14744291235 scopus 로고
    • 4. S. D. Baranovskii V. G. Karpov B. I. Shklovskii 1988 Zh. Éksp. Teor. Fiz. 94 3 278 1988ZhETF..94..278B [Sov. Phys. JETP 67, 588 (1988)] S. D. Baranovskii, V. G. Karpov, and B. I. Shklovskii, Zh. Éksp. Teor. Fiz. 94 (3), 278 (1988) [Sov. Phys. JETP 67, 588 (1988)].
    • (1988) Zh. Éksp. Teor. Fiz. , vol.94 , Issue.3 , pp. 278
    • Baranovskii, S.D.1    Karpov, V.G.2    Shklovskii, B.I.3
  • 5
    • 0003421806 scopus 로고
    • Electronic Properties of Doped Semiconductors
    • 5. B. I. Shklovskii A. L. Efros 1979 Electronic Properties of Doped Semiconductors Nauka Moscow B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer-Verlag, New York, 1984).
    • (1979)
    • Shklovskii, B.I.1    Efros, A.L.2
  • 6
    • 0004289868 scopus 로고
    • Defect Electronics in Semiconductors
    • 6. H. F. Matare 1971 Defect Electronics in Semiconductors Wiley New York H. F. Matare, Defect Electronics in Semiconductors (Wiley, New York, 1971; Mir, Moscow, 1974).
    • (1971)
    • Matare, H.F.1
  • 7
    • 33744708257 scopus 로고
    • 7. S. D. Baranovskii E. L. Ivchenko B. I. Shklovskii 1987 Zh. Éksp. Teor. Fiz. 92 2234 [Sov. Phys. JETP 65, 1260 (1987)] S. D. Baranovskii, E. L. Ivchenko, and B. I. Shklovskii, Zh. Éksp. Teor. Fiz. 92, 2234 (1987) [Sov. Phys. JETP 65, 1260 (1987)].
    • (1987) Zh. Éksp. Teor. Fiz. , vol.92 , pp. 2234
    • Baranovskii, S.D.1    Ivchenko, E.L.2    Shklovskii, B.I.3
  • 8
    • 33751433745 scopus 로고    scopus 로고
    • Critical Technology and Fundamental Problems in the Physics of Condensed Matter: Proceedings of Lecturers of the School
    • 8. N. S. Grushko 1999 Critical Technology and Fundamental Problems in the Physics of Condensed Matter: Proceedings of Lecturers of the School Ul’yanovsk. Gos. Univ. Ul’yanovsk 81 N. S. Grushko, in Critical Technology and Fundamental Problems in the Physics of Condensed Matter: Proceedings of Lecturers of the School (Ul’yanovsk. Gos. Univ., Ul’yanovsk, 1999), p. 81.
    • (1999) , pp. 81
    • Grushko, N.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.