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Volumn 38, Issue 5, 2004, Pages 546-549

Variation in the built-in potential of a photodiode based on an n-InSe-p-GaSe heterojunction in the course of aging

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EID: 2642542671     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1755889     Document Type: Article
Times cited : (10)

References (27)
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