Radiation-induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 15, 2004, Pages

  Mani, R G ^a   Narayanamurti, V ^a   Von Klitzing, K ^b   Smet, J H ^b   Johnson, W B ^c   Umansky, V ^d  

^a HARVARD UNIVERSITY   (United States)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c LABORATORY FOR PHYSICAL SCIENCES   (United States)

^d WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM GALLIUM ARSENIDE; ARSENIC; GALLIUM; GALLIUM ARSENIDE; UNCLASSIFIED DRUG;

ARTICLE; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON; ENERGY; IRRADIATION; MAGNETIC FIELD; MICROWAVE RADIATION; OSCILLATION; TEMPERATURE;

EID: 37649032556     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.155310     Document Type: Article

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