Discrete dopant fluctuation in limited-width FinFETs for VLSI circuit application: A theoretical study

2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06

Volumn , Issue , 2006, Pages

  Chiang, Meng Hsueh ^a   Lin, Jeng Nan ^a   Kim, Keunwoo ^b   Chuang, Ching Te ^b  

^a NATIONAL ILAN UNIVERSITY   (Taiwan)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FIELD EFFECT SEMICONDUCTOR DEVICES; GATES (TRANSISTOR); IMPURITIES; SEMICONDUCTOR DOPING;

FINFETS; IMPURITY DOPANT; RANDOM DOPANT FLUCTUATION (RDF); SILICON CHANNEL; T;

VLSI CIRCUITS;

EID: 37649028470     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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