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Volumn , Issue , 2007, Pages 836-838

Nanowire placement with ink jet heads

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PRINTING MACHINERY; SUBSTRATES;

EID: 37349063352     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (9)
  • 1
    • 13644274755 scopus 로고    scopus 로고
    • Electronic field-assisted emission from GaN: The role of surface charges
    • A. Mayer, N. M. Miskovsky, and P. H. Cutler, Electronic field-assisted emission from GaN: the role of surface charges, Semicond. Sci. Technol., 20, (2005): 202-08.
    • (2005) Semicond. Sci. Technol , vol.20 , pp. 202-208
    • Mayer, A.1    Miskovsky, N.M.2    Cutler, P.H.3
  • 4
    • 12844256364 scopus 로고    scopus 로고
    • A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111)Si substrate, Japanese Journal of Applied Physics Part 2-Letters & Express Letters, 43.12A (2004): L1524-L26.
    • A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111)Si substrate, Japanese Journal of Applied Physics Part 2-Letters & Express Letters, 43.12A (2004): L1524-L26.
  • 6
    • 37349116129 scopus 로고    scopus 로고
    • K. A. Bertness, et al. High degree of crystalline perfection in spontaneously grown GaN nanowires. GaN, AlN, InN and Related Materials in Materials Science. Eds. M. Kuball, et al. Boston, MA: Mater. Res. Soc. Symp. Proc. 892, Warrendale,PA, 2005, 2005. 0892-FF31-03. 892.
    • K. A. Bertness, et al. "High degree of crystalline perfection in spontaneously grown GaN nanowires." GaN, AlN, InN and Related Materials in Materials Science. Eds. M. Kuball, et al. Boston, MA: Mater. Res. Soc. Symp. Proc. 892, Warrendale,PA, 2005, 2005. 0892-FF31-03. Vol. 892.
  • 8
    • 30344479164 scopus 로고    scopus 로고
    • K. A. Bertness, A. Roshko, N. A. Sanford, J. M. Barker, and A. V. Davydov, Spontaneously grown GaN and AlGaN nanowires, Journal of Crystal Growth, 287.2 (2006): 522-27.
    • K. A. Bertness, A. Roshko, N. A. Sanford, J. M. Barker, and A. V. Davydov, Spontaneously grown GaN and AlGaN nanowires, Journal of Crystal Growth, 287.2 (2006): 522-27.
  • 9
    • 33947211921 scopus 로고    scopus 로고
    • Drop Placement Error Analysis for Ink Jet Deposition
    • Ed. Ross Mills. Denver, CO: Society for Imaging Science and Technology and the Imaging Society of Japan
    • Ross N. Mills, Gregory D. Gates, and Shawn Santana. "Drop Placement Error Analysis for Ink Jet Deposition." Digital Fabrication 2006. Ed. Ross Mills. Denver, CO: Society for Imaging Science and Technology and the Imaging Society of Japan, 2006.
    • (2006) Digital Fabrication 2006
    • Mills, R.N.1    Gates, G.D.2    Santana, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.