Role of deep traps in carrier generation and transport in differently doped InP wafers

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 390-393

  Sun, N ^a   Jarasiunas, K ^b   Sudzius, M ^b   Kadys, A ^b   Zhou, X ^a   Sun, T ^a  

^a HEBEI SEMICONDUCTOR RESEARCH INSTITUTE   (China)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

Deep centers; Four wave mixing; InP

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC SPACE CHARGE; MIXING; PHOTOCONDUCTING DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

CARRIER DIFFUSION; CARRIER GENERATION; DEEP CENTERS; FOUR-WAVE MIXING;

ELECTRON TRAPS;

EID: 33744540552     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.022     Document Type: Article

References (7)

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6. Jarasiunas K., and Gerritsen H.J. Appl Phys Lett 33 (1978) 190
7. Kadys A., et al. Acta Phys Polon A 105 6 (2004) 651-657