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Volumn , Issue , 2006, Pages 227-230
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AlGaN/GaN MIS HEMT with AlN dielectric
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Author keywords
AlGaN GaN; AlN; HEMT; Microwave power transisitor; MIS
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Indexed keywords
ALGAN/GAN;
ALN;
GATE-LEAKAGE CURRENT;
MAXIMUM OSCILLATION FREQUENCY;
MICROWAVE POWER;
MULTI-FINGER DEVICES;
ORDER REDUCTION;
POWER-ADDED EFFICIENCY;
DRAIN CURRENT;
GALLIUM NITRIDE;
HETEROJUNCTION BIPOLAR TRANSISTORS;
MANAGEMENT INFORMATION SYSTEMS;
SEMICONDUCTOR DEVICE MANUFACTURE;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 35248852279
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (7)
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References (7)
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