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Volumn , Issue , 2006, Pages 227-230

AlGaN/GaN MIS HEMT with AlN dielectric

Author keywords

AlGaN GaN; AlN; HEMT; Microwave power transisitor; MIS

Indexed keywords

ALGAN/GAN; ALN; GATE-LEAKAGE CURRENT; MAXIMUM OSCILLATION FREQUENCY; MICROWAVE POWER; MULTI-FINGER DEVICES; ORDER REDUCTION; POWER-ADDED EFFICIENCY;

EID: 35248852279     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (7)

References (7)
  • 1
    • 1642359162 scopus 로고    scopus 로고
    • 30 W/mm GaN HEMTs by field plate optimization
    • Y.-F. Wu, A. Saxler, M. Moore, et al., 30 W/mm GaN HEMTs by field plate optimization. IEEE Electron Device Lett., 25, pp. 117-119, 2004.
    • (2004) IEEE Electron Device Lett. , vol.25 , pp. 117-119
    • Wu, Y.-F.1    Saxler, A.2    Moore, M.3
  • 2
    • 10644284881 scopus 로고    scopus 로고
    • High-power recessed-gate AlGaN-GaN HFET with a field-modulating plate
    • Yasuhiro Okamoto, Yuji Ando, Tatsuo Nakayama, et al., High-Power Recessed-Gate AlGaN-GaN HFET With a Field-Modulating Plate. IEEE Electron Devices, 51, pp. 2217-2222, 2004.
    • (2004) IEEE Electron Devices , vol.51 , pp. 2217-2222
    • Okamoto, Y.1    Ando, Y.2    Nakayama, T.3
  • 4
    • 84887435109 scopus 로고    scopus 로고
    • An Over 100 W n-GaN/n- AlGaN/GaN MIS-HEMT power amplifier for wireless base station applications
    • M. Kanamura, T. Kikkawa, et al., An Over 100 W n-GaN/n- AlGaN/GaN MIS-HEMT Power Amplifier for Wireless Base Station Applications. IEDM Tech. Digest, pp23-2, 2005.
    • (2005) IEDM Tech. Digest , pp. 23-32
    • Kanamura, M.1    Kikkawa, T.2
  • 5
    • 84887452523 scopus 로고    scopus 로고
    • High-power AlGaN/GaN HEMTs for Ka-band applications
    • T. Palacios, A. Chakraborty, S. Rajan, et al., High-Power AlGaN/GaN HEMTs for Ka-Band Applications. IEEE Electron Devices, 51, pp. 2217-2222, 2004.
    • (2004) IEEE Electron Devices , vol.51 , pp. 2217-2222
    • Palacios, T.1    Chakraborty, A.2    Rajan, S.3
  • 6
    • 20544448948 scopus 로고    scopus 로고
    • Gate-recessed AlGaN- GaN HEMTs for high-performance millimeter-wave applications
    • J. S. Moon, Shihchang Wu, D. Wong, et al., Gate-Recessed AlGaN- GaN HEMTs for High-Performance Millimeter-Wave Applications. IEEE Electron Device Lett., 26, pp. 348-350, 2005.
    • (2005) IEEE Electron Device Lett. , vol.26 , pp. 348-350
    • Moon, J.S.1    Wu, S.2    Wong, D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.