Application of RF varactor using BaxSri1-xTiO 3/TiO2/HR-Si substrate for reconfigurable radio

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 54, Issue 11, 2007, Pages 2227-2232

  Kim, Ki Byoung ^a,b   Park, Chul Soon ^a,b  

^a Information and Communications University ^*

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; BARIUM; BUFFER LAYERS; FIELD EFFECT TRANSISTORS; SILICON WAFERS; THIN FILMS;

COMMUTATION QUALITY FACTOR (CQF); INTERDIGITAL CAPACITOR (IDC); RECONFIGURABLE RADIO; TUNING FREQUENCY;

VARACTORS;

EID: 37049020665     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2007.527     Document Type: Article

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