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Volumn , Issue , 2006, Pages 315-318
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Statistical exploration of the dual supply voltage space of a 65nm PD/SOI CMOS SRAM cell
a b c c c a
c
IBM
(United States)
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC POTENTIAL;
ELECTRIC POWER SYSTEMS;
RANDOM PROCESSES;
STATIC RANDOM ACCESS STORAGE;
STATISTICAL METHODS;
LOGIC DESIGN;
SOLID STATE DEVICES;
BITLINE VOLTAGES;
CELL POWER SUPPLY;
SUPPLY VOLTAGE SPACE;
DUAL SUPPLY;
DUAL SUPPLY VOLTAGES;
POWER SUPPLY;
PROCESS VARIATION;
SRAM CELL;
SRAM DESIGN;
WORDLINES;
CMOS INTEGRATED CIRCUITS;
RECONFIGURABLE HARDWARE;
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EID: 38949103292
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ESSDER.2006.307701 Document Type: Conference Paper |
Times cited : (20)
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References (8)
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