Demonstration of Rashba spin splitting in GaN-based heterostructures

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Weber, W ^a   Ganichev, S D ^a   Danilov, S N ^a   Weiss, D ^a   Prettl, W ^a   Kvon, Z D ^b   Bel'kov, V V ^c   Golub, L E ^c   Cho, Hyun Ick ^d   Lee, Jung Hee ^d  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; INFRARED RADIATION; INTERFACES (MATERIALS); PHOTOCURRENTS;

CONDUCTION BANDS; GAN-BASED HETEROSTRUCTURE; RADIATION HELICITY; RASHBA SPIN SPLITTING;

HETEROJUNCTIONS;

EID: 29844453663     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2158024     Document Type: Article

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