Transverse mode control in GaN-based laser diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4283, Issue , 2001, Pages 67-77

  Amano, H ^a   Kamiyama, S ^a   Detchprohm, T ^a   Sato, T ^a   Iwaya, M ^a   Nitta, S ^a   Terao, S ^a   Akasaki, I ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

AlGaN; Index guide; Inner stripe; Ridge waveguide; Transverse mode; Violet laser diode

Indexed keywords

ASPECT RATIO; EPITAXIAL GROWTH; GALLIUM NITRIDE; LASER MODES; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS;

CURRENT BLOCKING LAYERS;

SEMICONDUCTOR LASERS;

EID: 0034774406     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.432610     Document Type: Conference Paper

References (8)

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. P-type conduction in mg-doped GaN treated with low-energy electron beam irradiation
3. Improvement of far field pattern in nitride laser diodes
4. Theoretical analysis of optical transverse-mode control on GaN-based laser diodes
5. Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of gallium nitride on sapphire
6. Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters