Deposition of device quality silicon nitride with ultra high deposition rate (> 7 nm/s) using hot-wire CVD

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 533-536

  Verlaan, V ^a   Houweling, Z S ^a   van der Werf, C H M ^a   Romijn, I G ^b   Weeber, A W ^b   Goldbach, H D ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

^b TNO   (Netherlands)

Author keywords

High deposition rate; Hot wire CVD; Multicrystalline solar cells; Silicon nitride

Indexed keywords

ATOMIC PHYSICS; DEPOSITION RATES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SOLAR CELLS;

HIGH DEPOSITION RATE; HOT-WIRE CVD; MULTICRYSTALLINE SOLAR CELLS;

SILICON NITRIDE;

EID: 36749016727     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.111     Document Type: Article

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