Low temperature molecular beam epitaxy growth of cubic GaCrN

Journal of Crystal Growth

Volumn 310, Issue 1, 2008, Pages 40-46

  Kimura, S ^a   Emura, S ^a   Yamauchi, Y ^a   Zhou, Y K ^a   Hasegawa, S ^a   Asahi, H ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

A1. Solubility; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Magnetic materials; B2. Semiconducting III V materials

Indexed keywords

FERROMAGNETISM; MAGNESIA; MAGNETIC FIELD EFFECTS; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SOLUBILITY; X RAY DIFFRACTION;

MAGNETIC FIELD CURVES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 36549026803     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.09.038     Document Type: Article

References (17)

1. Sato K., and Katayama-Yoshida H. Jpn. J. Appl. Phys. 40 (2001) L485
2. Leed M.L., El-Masry N.A., Stadelmaier H.H., Ritums M.K., Reed M.J., Parker C.A., Roberts J.C., and Bedair S.M. Appl. Phys. Lett. 79 (2001) 3473
3. Hashimoto M., Zhou Y.K., Kanamura M., and Asahi H. Solid State Commun. 122 (2002) 37
4. Kim J.J., Makino H., Chen P.P., Suzuki T., Oh D.C., Ko H.J., Chang J.H., Hanada T., and Yao T. Phys. Status Solidi (c) (2003) 2869
5. Liu H.X., Wu S.Y., Singh R.K., Gu L., Smith D.J., Newman N., Dilley N.R., Montes L., and Simmonds M.B. Appl. Phys. Lett. 85 (2004) 4076
6. Kimura S., Shanthi S., Zhou Y.K., Kim M.S., Kobayashi S., Emura S., Ishimaru M., Hirotsu Y., Hasegawa S., and Asahi H. Jpn. J. Appl. Phys. 45 (2006) 76
7. Hashimoto M., Tanaka H., Emura S., Kim M.S., Honma T., Umesaki N., Zhou Y.K., Hasegawa S., and Asahi H. J. Crystal Growth 273 (2004) 149
8. Hashimoto M., Emura S., Tanaka H., Honma T., Umesaki N., Hasegawa S., and Asahi H. J. Appl. Phys 100 (2006) 103907
9. Kimura S., Emura S., Ofuchi H., Zhou Y.K., Hasegawa S., and Asahi H. J. Crystal Growth 301 (2007) 651
10. Sato K., Schweika W., Dederichs P.H., and Katayama-Yoshida H. Phys. Rev. B 70 (2004) 201202
11. Munekata H., Ohno H., Von Molnár S., Segmüller A., Chang L.L., and Esaki L. Phys. Rev. Lett. 63 (1989) 1849
12. R.K. Singh, S.Y. Wu, H.X. Liu, L. Gu, D.J. Smith, N. Newman, 86 (2005) 012504.
13. Haider M.B., Yang R., Al-Brithen H., Constantin C., Ingram D.C., Smith A.R., Caruntu G., and O'Connor C.J. J. Crystal Growth 285 (2005) 300
14. Emura S., Morinaga T., Takizawa J., Nomura M., Bauchspiess K.R., Murata T., and Harada K. Phys. Rev. B 47 (1993) 6918
15. 3v has no inversion operation.
16. Cui X.Y., Delley B., Freeman A.J., and Stampfl C. Phys. Rev. Lett. 97 (2006) 016402
17. Kim J.J., Makino H., Sakurai M., Oh D.C., Hanada T., Cho M.W., Yao T., Emura S., and Kobayashi K. J. Vac. Sci. Technol. B 23 (2005) 1308