TOF-LEIS spectra of Ga/Si: Peak shape analysis

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 265, Issue 2, 2007, Pages 569-575

  Kolibal M ^a   Tomanec, O ^a   Prusa S ^a   Plojhar, M ^a   Markin, S N ^b   Dittrichova L ^a   Spousta, J ^a   Bauer, P ^b   Sikola T ^a  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

68.43.Hn; 68.49. h; 68.55. a; Gallium; Growth; Low energy ion scattering; Morphology; Silicon

Indexed keywords

DEPOSITION; ION BEAMS; SCATTERING; SILICON; THIN FILMS;

3D ISLAND GROWTH; LOW ENERGY ION SCATTERING; SCATTERING MODEL;

GALLIUM COMPOUNDS;

EID: 36448995773     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.09.038     Document Type: Article

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