In situ analysis of Ga-ultrathin films by TOF-LEIS

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 249, Issue 1-2 SPEC. ISS., 2006, Pages 318-321

  Kolibal M ^a   Prusa S ^a   Plojhar, M ^a   Babor P ^a   Potocek M ^a   Tomanec, O ^a   Kostelnik P ^a   Markin, S N ^b   Bauer, P ^b   Sikola T ^a  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

AFM; Gallium; Growth; Low energy ion scattering; Silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM; SILICON; SUBSTRATES; THERMAL EFFECTS;

GROWTH; LINEAR DEPENDENCE; LOW ENERGY ION SCATTERING;

ULTRATHIN FILMS;

EID: 33745934074     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.04.020     Document Type: Article

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