TOF-LEIS analysis of ultra thin films: Ga and Ga-N layer growth on Si(1 1 1)

Surface Science

Volumn 566-568, Issue 1-3 PART 2, 2004, Pages 885-889

  Kolíbal, Miroslav ^a   Průša, Stanislav ^a   Bábor, Petr ^a   Šikola, Tomáš ^a  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

Gallium; Gallium nitride; Growth; Low energy ion scattering (LEIS); Silicon

Indexed keywords

CALIBRATION; DEPOSITION; EVAPORATION; GROWTH (MATERIALS); HEAT TREATMENT; ION BEAMS; PYROMETERS; SCATTERING; SENSITIVITY ANALYSIS; SILICON; SPECTROMETERS; THIN FILMS;

E-BEAM EFFUSION; ION SCATTERING; LOW ENERGY ION SCATTERING (LEIS); SURFACE SENSITIVITY;

GALLIUM COMPOUNDS;

EID: 4544388264     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.06.026     Document Type: Article

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