Inductively Coupled Plasma (ICP) Metal Etch Damage to 35-60A gate oxide

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 731-734

  Krishnan, Srikanth ^a   Dostalik, W W ^a   Brennan, Ken ^a   Aur, Shian ^a   Rangan, Sanjay ^b   Ashok, S ^b  

^a TEXAS INSTRUMENTS   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; ELECTRIC FIELDS; INTERFACE STATES; METALS; MOS DEVICES; MOSFET DEVICES; CHEMICAL REACTORS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; ETCHING; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXIDES; RELIABILITY; SEMICONDUCTOR PLASMAS;

ANTENNA EFFECTS; ETCH DAMAGE; GATE OXIDE; INDUCTIVELY-COUPLED PLASMA; INTERFACES STATE; LOW DAMAGES; METAL ETCH; NMOSFET; THIN OXIDES; WAFER SURFACE;

INDUCTIVELY COUPLED PLASMA; MOS DEVICES;

CHARGING POLARITY; CHARGING PUMPING MEASUREMENTS; GATE OXIDE; INDUCTIVELY COUPLED PLASMA; INTERFACE STATES; LATENT ANTENNA EFFECT; METAL ETCH DAMAGE; PLASMA STRESS; PMOS DEVICES; ULTRATHIN GATE DIELECTRICS;

EID: 0030402016     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554084     Document Type: Conference Paper

References (6)

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