The influence of network rigidity on the electrical switching behaviour of Ge-Te-Si glasses suitable for phase change memory applications

Journal of Physics D: Applied Physics

Volumn 40, Issue 23, 2007, Pages 7515-7518

  Anbarasu, M ^a   Asokan, S ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SWITCHES; PHASE CHANGE MEMORY; RIGIDITY; THICKNESS MEASUREMENT; THRESHOLD VOLTAGE;

ELECTRICAL SWITCHING; ELECTRODE REGIONS; ON STATE CURRENTS; SWITCHING VOLTAGE;

GLASS;

EID: 36349036526     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/23/040     Document Type: Article

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