Photoluminescence of ZnO and Mn-doped ZnO polycrystalline films prepared by plasma enhanced chemical vapour deposition

Chinese Physics Letters

Volumn 24, Issue 9, 2007, Pages 2685-2688

  Lin, Ying Bin ^a,b   Yang, Yan Min ^a   Xu, Jian Ping ^b   Liu, Xing Chong ^b   Wang, Jian Feng ^b   Huang, Zhi Gao ^a   Zhang, Feng Ming ^b   Du, You Wei ^b  

^a NANJING UNIVERSITY   (China)

^b FUJIAN NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FILM PREPARATION; II-VI SEMICONDUCTORS; MANGANESE; PHOTOLUMINESCENCE; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE; ZINC SULFIDE;

EMISSION EFFICIENCIES; LOWS-TEMPERATURES; METALLICS; MN-DOPED ZNO; MN-DOPING; POLYCRYSTALLINE FILM; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SECOND PHASE; WURTZITE STRUCTURE; ZNO DOPING;

X RAY DIFFRACTION;

EID: 36348933404     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/9/062     Document Type: Article

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